Datasheet > H557

H557

更新时间： 2024-09-28 10:44:35

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	503K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H557 数据手册

P N P S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H557

█ APPLICATIONS

SWITCHING AND AMPLIFIER

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -45V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100mA

1―Collector，C

2―Base，B

3―Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Min

-50

-45

-5

Typ

Max Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

I_C=-100μA, I_E=0

I_C=-10mA, I_B=0

I_E=-100μA，I_C=0

V_CB=-30V, I_E=0

-15 nA

800

HFE

DC Current Gain

V_CE=-5V, I_C=-2mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

V_CE=-5V, I_C=-2mA

V_CE=-5V, I_C=-10mA

110

VCE(sat1) Collector- Emitter Saturation Voltage

-90 -300 mV

-250 -650 mV

VCE(sat2)

VBE(sat1) Base-Emitter Saturation Voltage

-700

-900

VBE(sat2)

VBE(ON1) Base-Emitter On Voltage

-660 -750 mV

-800 mV

VBE(ON2)

Cob

Current Gain-Bandwidth Product

Output Capacitance

150

MHz V_CE=-5V, I_C=-10mA,f=1MHz

pF V_CB=-10V, I_E=0,f=1MHz

█ hFE Classification

110— 220

200— 450

420— 800

中文翻译

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