Datasheet > H556

H556

更新时间： 2024-01-29 22:37:50

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	81K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H556 数据手册

PN P S I LI C O N TRAN S I STO R

Shantou Huashan Electronic Devices Co.,Ltd.

H556

█ SWITCHING AND AMPLIFIER

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500mW

1―Collector，C

2―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -80V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -65V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

3―Emitter，E

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -100mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Collector Cut-off Current

Min

Typ

Max Unit

Test Conditions

ICBO

-15 nA

800

V_CB=-30V, I_E=0

HFE

DC Current Gain

110

V_CE=-5V, I_C=-2mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

V_CE=-5V, I_C=-2mA

VCE(sat1)

VCE(sat2)

VBE(sat1)

VBE(sat2)

VBE(ON)

Collector- Emitter Saturation Voltage

-90 -300 mV

-250 -650 mV

Base-Emitter Saturation Voltage

-0.7

-0.9

Base-Emitter On Voltage

-600 -660 -750 mV

V_CE=-5V, I_C=-10mA

f=100MHz

V_CE=-5V, I_C=-200μA

Current Gain-Bandwidth Product

150

MHz

Noise Figure

10 dB

f=1KHz，Rg=2KΩ

█ hFE Classification

110— 220

200— 450

420— 800

中文翻译

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