Datasheet > H5551

H5551

更新时间： 2024-01-14 12:40:51

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	95K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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H5551 数据手册

NPN S I LI C O N TRAN S I STO R

Shantou Huashan Electronic Devices Co.,Ltd.

H5551

█ AMPLIFIER TRANSISTOR

Collector-Emitter Voltage:Vceo=160V.

CollectorDissipation:Pc(max)=625mW

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 625mW

1―Emitter，E

2―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 180V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 160V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6V

3―Collector，C

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BVCBO

BVCEO

BVEBO

ICBO

180

160

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=10μA，I_C=0

V_CB=120V, I_E=0

V_EB=4V, I_C=0

50 nA

Emitter-Base Cut-off Current

DC Current Gain

IEBO

HFE（1）

HFE（2）

HFE（3）

VCE(sat1)

VCE(sat2)

VBE(sat1)

VBE(sat2)

V_CE=5V, I_C=1mA

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

I_C=10mA, I_B=-1mA

I_C=50mA, I_B=5mA

I_C=10mA, I_B=1mA

I_C=50mA, I_B=5mA,

280

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

0.15 V

0.2 V

V_CE=10V, I_C=10mA

F=100MHz

Current Gain-Bandwidth Product

100

300 MHz

中文翻译

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