Datasheet > H546

H546

更新时间： 2024-11-29 10:44:35

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	68K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H546 数据手册

N PN S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H546

█ SWITCHING AND AMPLIFIER

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500mW

1―Collector，C

2―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 80V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 65V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6V

3―Emitter，E

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BVCBO

BVCEO

BVEBO

ICBO

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=1mA，I_C=0

15 nA

800

V_CB=30V, I_E=0

HFE（1）

VCE(sat1)

VCE(sat2)

VBE(sat1)

VBE(sat2)

VBE(ON)

DC Current Gain

110

V_CE=5V, I_C=2mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

V_CE=5V, I_C=2mA

Collector- Emitter Saturation Voltage

90 250 mV

200 600 mV

Base-Emitter Saturation Voltage

0.7 1

0.9 1.2 V

580 660 700 mV

Base-Emitter On Voltage

Current Gain-Bandwidth Product

300

2.5

MHz V_CE=5V, I_C=10mA

V_CB=10V, I_E=0

f=100MHz

V_CE=5V, I_C=0.2Ma

f=1KHz，Rg=2KΩ

Cob

Output Capacitance

Noise Figure

10 dB

█ hFE Classification

110— 220

200— 450

420— 800

中文翻译

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