Datasheet > H380TM

H380TM

更新时间： 2024-11-07 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	243K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H380TM 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H380TM

█ APPLICATIONS

High Frequency Amplifier Application.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 35V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 30V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50mA

I_E— — Emitter Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50mA

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

HFE

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

I_C=100μA, I_E=0

I_C=1mA, I_B=0

I_E=100μA，I_C=0

V_CE=12V, I_C=2mA

I_C=10mA, I_B=1mA

V_CB=35V, I_E=0

240

VCE(sat)

VBE(sat)

ICBO

Collector- Emitter Saturation Voltage

Base-Emitter Voltage

0.4 V

1.0 V

0.1 μA

1.0 μA

Collector Cut-off Current

IEBO

Emitter Cut-off Current

V_EB=4V, I_C=0

Current Gain-Bandwidth Product

Output Capacitance

100

400 MHz V_CE=10V, I_C=1mA

Cob

1.4 2.0 3.2 pF V_CB=10V, I_E=0，f=1MHz

█ hFE Classification

40— 80

70— 140

120— 240

中文翻译

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