Datasheet > H3055MJ

H3055MJ

更新时间： 2024-09-23 12:24:07

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HSMC		/
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描述
N-Channel Enhancement-Mode MOSFET (30V, 12A)

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H3055MJ 数据手册

Spec. No. : MOS200702

Issued Date : 2007.03.01

Revised Date : 2007.03.28

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

H3055MJ Pin Assignment

H3055MJ

3-Lead Plastic TO-252

Package Code: J

Pin 1: Gate

Tab

N-Channel Enhancement-Mode MOSFET (30V, 12A)

Pin 2 & Tab: Drain

Pin 3: Source

Description

Internal Schematic

Diagram

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced

trench process. It has been optimized for power management applications with a

wide range of gate drive voltage (2.5V-10V)

Features

• R_DS(on)=45mΩ@V_GS=4.5V, I_D=5.2A; R_DS(on)=35mΩ@V_GS=10V, I_D=6A

• High Density Cell Design for Ultra Low On-Resistance

• High Power and Current Handing Capability

• Fully Characterized Avalanche Voltage and Current

• Ideal for Li ion Battery Pack Applications

Applications

• Battery Protection

• Load Switch

• Power Management

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

±20

Drain Current (Continuous)

Drain Current (Pulsed) ^*1

I_DM

Total Power Dissipation @T_A=25^oC

1.3

P_D

Total Power Dissipation @T_A=75^oC

T_j, T_stg

Operating and Storage Temperature Range

Thermal Resistance Junction to Ambient^*2

-55 to +150

62.5

°C

°C/W

R_θ

*1: Maximum DC current limited by the package

*2: 1-in²2oz Cu PCB board

H3055MJ

HSMC Product Specification

12 3 4

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