Spec. No. : HE6219
Issued Date : 1992.09.21
Revised Date : 2002.02.20
Page No. : 1/4
HI-SINCERITY
MICROELECTRONICS CORP.
H2N5551
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The H2N5551 is designed for amplifier transistor.
Features
TO-92
• Complements to PNP Type H2N5401
• High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... 180 V
VCEO Collector to Emitter Voltage.................................................................................... 160 V
VEBO Emitter to Base Voltage.............................................................................................. 6 V
IC Collector Current ....................................................................................................... 600 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min.
180
160
6
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
Max.
Unit
V
V
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=10uA, IC=0
VCB=120V, IE=0
-
-
-
V
50
50
0.15
0.2
1
1
-
400
-
300
6
nA
nA
V
V
V
IEBO
VEB=4V, IC=0
*VCE(sat)1
*VCE(sat)2
*VBE(sat)1
*VBE(sat)2
*hFE1
IC=10mA, IB=1.0mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=5V, IC=1mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz, IE=0
-
-
-
-
V
80
80
50
100
-
*hFE2
*hFE3
fT
Cob
160
-
-
-
MHz
pF
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification of hFE2
Rank
A
N
C
Range
80-200
100-250
160-400
H2N5551
HSMC Product Specification