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H2N5551 PDF预览

H2N5551

更新时间: 2024-10-13 22:33:03
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页数 文件大小 规格书
4页 41K
描述
NPN EPITAXIAL PLANAR TRANSISTOR

H2N5551 数据手册

 浏览型号H2N5551的Datasheet PDF文件第2页浏览型号H2N5551的Datasheet PDF文件第3页浏览型号H2N5551的Datasheet PDF文件第4页 
Spec. No. : HE6219  
Issued Date : 1992.09.21  
Revised Date : 2002.02.20  
Page No. : 1/4  
HI-SINCERITY  
MICROELECTRONICS CORP.  
H2N5551  
NPN EPITAXIAL PLANAR TRANSISTOR  
Description  
The H2N5551 is designed for amplifier transistor.  
Features  
TO-92  
Complements to PNP Type H2N5401  
High Collector-Emitter Breakdown Voltage (VCEO>160V (@IC=1mA))  
Absolute Maximum Ratings  
Maximum Temperatures  
Storage Temperature............................................................................................ -55 ~ +150 °C  
Junction Temperature.................................................................................... +150 °C Maximum  
Maximum Power Dissipation  
Total Power Dissipation (Ta=25°C)................................................................................ 625 mW  
Maximum Voltages and Currents (Ta=25°C)  
VCBO Collector to Base Voltage ....................................................................................... 180 V  
VCEO Collector to Emitter Voltage.................................................................................... 160 V  
VEBO Emitter to Base Voltage.............................................................................................. 6 V  
IC Collector Current ....................................................................................................... 600 mA  
Characteristics (Ta=25°C)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min.  
180  
160  
6
-
-
-
-
-
Typ.  
-
-
-
-
-
-
-
Max.  
Unit  
V
V
Test Conditions  
IC=100uA, IE=0  
IC=1mA, IB=0  
IE=10uA, IC=0  
VCB=120V, IE=0  
-
-
-
V
50  
50  
0.15  
0.2  
1
1
-
400  
-
300  
6
nA  
nA  
V
V
V
IEBO  
VEB=4V, IC=0  
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)1  
*VBE(sat)2  
*hFE1  
IC=10mA, IB=1.0mA  
IC=50mA, IB=5mA  
IC=10mA, IB=1mA  
IC=50mA, IB=5mA  
VCE=5V, IC=1mA  
VCE=5V, IC=10mA  
VCE=5V, IC=50mA  
VCE=10V, IC=10mA, f=100MHz  
VCB=10V, f=1MHz, IE=0  
-
-
-
-
V
80  
80  
50  
100  
-
*hFE2  
*hFE3  
fT  
Cob  
160  
-
-
-
MHz  
pF  
*Pulse Test: Pulse Width 380us, Duty Cycle2%  
Classification of hFE2  
Rank  
A
N
C
Range  
80-200  
100-250  
160-400  
H2N5551  
HSMC Product Specification  

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