Datasheet > H2907A

H2907A

更新时间： 2022-12-18 02:09:51

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	245K
描述
PNP SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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H2907A 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H2907A

█ APPLICATIONS

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATIONS

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 625mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -60V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -60V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -600mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

1―Emitter，E

2―Base，B

3―Collector，C

Symbol

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

Characteristics

Min

-60

-5

Typ

Max Unit

Test Conditions

I_C=-10μA, I =0

I_C=-10mA, I =0

I_E=-10μA，I_C=0

ICBO

Collector Cut-off Current

V_CB=-50V, I_E=0

-10 nA

HFE(1)

HFE(2)

HFE(3)

DC Current Gain

V_CE=-10V, I_C=-0.1mA

V_CE=-10V, I_C=-150mA

V_CE=-10V, I_C=-500mA

I_C=-150mA, I_B=-15mA

I_C=-500mA, I_B=-50mA

I_C=-150mA, I_B=-15mA

I_C=-500mA, I_B=-50mA

100

300

VCE(sat1) Collector- Emitter Saturation Voltage

-0.4 V

-1.6 V

-1.3 V

-2.6 V

VCE(sat2)

VBE(sat1) Base-Emitter Saturation Voltage

VBE(sat2)

Cob

tON

Current Gain-Bandwidth Product

Output Capacitance

Turn-On Time

200

MHz V_CE=-20V, I_C=-50mA，f=100MHz

pF V_CB=-10V, I_E=0，f=1MHz

Vcc=-30V

Ic=-150mA

IB1=-15mA

45 nS

10 nS

40 nS

100 nS

80 nS

30 nS

Delay Time

Rise Time

Vcc=-6V

tOFF

tSTG

Turn-Off Time

Ic=-150mA

IB1=IB2=-15mA

Storage Time

Fall Time

中文翻译

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