Datasheet > H237

H237

更新时间： 2024-11-02 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	506K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H237 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H237

█ APPLICATIONS

SWITCHING AND AMPLIFIER .

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

Tstg——Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T j——Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

PC——Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 500mW

VCBO——Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V

VCEO——Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 45V

VEBO——Emitter - Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6V

I C——C o l l e c t o r C u r r e n t ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 100mA

1? Collector，C

2? Base，B

3? Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

I_C=2mA, I =0

I_E=1μA，I_C=0

HFE

DC Current Gain

V_CE=5V, I_C=2mA

120

800

VCE(sat1) Collector- Emitter Saturation Voltage

VCE(sat2) Collector- Emitter Saturation Voltage

VBE(sat1) Base-Emitter Saturation Voltage

VBE(sat2) Base-Emitter Saturation Voltage

VBE(ON) Base-Emitter On Voltage

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

I_C=10mA, I_B=0.5mA

I_C=100mA, I_B=5mA

V_CE=5V, I_C=2mA

0.07 0.2 V

0.2 0.6 V

0.73 0.83 V

0.87 1.05 V

0.55 0.62 0.7 V

ICES

ft（1）

ft（2）

Cob

Collector Cut-off Current

Current Gain-Bandwidth Product

Output Capacitance

0.2 15 nA V_CE=50V, V_BE=0

MHz V_CE=3V, I_C=0.5mA, f=100MHz

MHz V_CE=5V, I_C=10mA, f=100MHz

150 250

3.5 6 pF V_CB=10V, I_E=0，f=1MHz

Input Capacitance

VEB=0.5V,IC=0,f=1MHz

V_CE=5V, I_C=0.2mA，

f=1KHz，RG=2KΩ

Cib

Noise Figure

10 dB

█ hFE Classification

120— 220

180— 460

380— 800

中文翻译

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