Datasheet > H2369

H2369

更新时间： 2024-09-30 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	242K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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H2369 数据手册

NPN S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H2369

█ APPLICATIONS

This device is designed for high speed saturated

switching at collector currents of mA to 100mA

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 625mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 40V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 15V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 4.5V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 200mA

1―Collector，C

2―Base，B

3―Emitter，E

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max

Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage

BVEBO Emitter-Base Breakdown Voltage

I_C=10μA, I =0

I_C=10mA, I =0

4.5

I_E=10μA，I_C=0

V_CE=1V, I_C=10mA

V_CE=2, I_C=100mA

I_C=10mA, I_B=1mA

V_CB=25V, I_E=0

HFE(1)

HFE(2)

DC Current Gain

150

VCE(sat) Collector- Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

0.2

0.7

100

ICBO

IEBO

Cob

Collector Cut-off Current

Emitter Cut-off Current

Output Capacitance

V_EB=4.5V, I_C=0

pF V_CB=5V, I_E=0，f=1MHz

中文翻译

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