Datasheet > H2347

H2347

更新时间： 2024-02-28 06:14:33

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
3页	240K
描述
NPN SILICON TRANSISTOR

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数据手册

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H2347 数据手册

NPN S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H2347

█ APPLICATIONS

TV UHF Oscillator Applications.

TV VHF Mixer Applications.

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg——Storage Temperature………………………… -55~150℃

T_j——Junction Temperature…………………………………150℃

P_C——Collector Dissipation…………………………………250mW

V_CBO——Collector-Base Voltage………………………………30V

V_CEO——Collector-Emitter Voltage……………………………15V

V_EBO——Emitter-Base Voltage………………………………3V

I_C——Collector Current………………………………………50mA

IE ——Emitter Current………………………………………-50mA

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min Typ Max Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

DC Current Gain

BVCBO

BVCEO

HFE

I_C=100μA, I_E=0

I_C=1mA, I_B=0

V_CE=3V, I_C=8mA

VCE(sat)

ICBO

Collector- Emitter Saturation Voltage

Collector Cut-off Current

0.5 V I_C=10mA, I_B=1mA

0.1 μA V_CB=15V, I_E=0

IEBO

Emitter Cut-off Current

1.0 μA V_EB=3V, I_C=0

Cob

Current Gain-Bandwidth Product

Output Capacitance

650

MHz V_CE=10V，I_C=8mA

1.2 1.5 pF V_CB=10V, I_E=0，f=1MHz

12 ps V_CB=10V, I_C=8mA, f=30MHz

Cc,rbb′ Collector-Base Time Constant

12 3

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