Datasheet > H2301N

H2301N

更新时间： 2024-11-11 12:24:07

品牌	Logo	应用领域
HSMC		/
页数	文件大小	规格书
4页	93K
描述
P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)

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数据手册

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H2301N 数据手册

Spec. No. : MOS200612

Issued Date : 2006.07.01

Revised Date : 2006.07.11

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

H2301N Pin Assignment & Symbol

H2301N

3-Lead Plastic SOT-23

Package Code: N

Pin 1: Gate 2: Source 3: Drain

P-Channel Enhancement-Mode MOSFET (-20V, -2.2A)

Source

Gate

Features

Drain

• R_DS(on)<100mΩ@V_GS=-4.5V, I_D=-2.8A

• R_DS(on)<150mΩ@V_GS=-2.5V, I_D=-2A

• Advanced Trench Process Technology

• High Density Cell Design for Ultra Low On-Resistance

• Improved Shoot-Through FOM

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

V_GS

I_D

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

-20

±8

Drain Current (Continuous)

Drain Current (Pulsed) ^*1

-2.2

I_DM

-8

Total Power Dissipation @T_A=25^oC

0.9

P_D

Total Power Dissipation @T_A=75^oC

0.57

-55 to +150

140

T_j, T_stg

Operating Junction and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^*2

°C

°C/W

R_θ

*1: Repetitive Rating: Pulse width limited by the maximum junction temperation.

*2: 1-in²2oz Cu PCB board

H2301N

HSMC Product Specification

12 3 4

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