Datasheet > H2257H06A5B

H2257H06A5B

更新时间： 2024-02-06 15:30:02

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	128K
描述
Rectifier Diode, 1 Phase, 1 Element, Silicon, 6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1

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H2257H06A5B 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
零件包装代码：	DIE	包装说明：	S-XUUC-N1
针数：	1	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.40
风险等级：	5.76	应用：	GENERAL PURPOSE
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	S-XUUC-N1
元件数量：	1	相数：	1
端子数量：	1	封装主体材料：	UNSPECIFIED
封装形状：	SQUARE	封装形式：	UNCASED CHIP
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

H2257H06A5B 数据手册

H2257H06A5B

Vishay High Power Products

HEXFRED^TM

Die in Wafer Form

FEATURES

RoHS

PRODUCT SUMMARY

COMPLIANT

• 100 % tested at probe

V_F

1.2 V maximum

• Available in tape and reel (upon request)

V_BR

600 V

Wafer

• Chip pack, and sawn on film (part number shown is for die

in waveform; contact factory for these other options)

• Designed and qualified for industrial level

GENERAL INFORMATION

The datasheet is based on Vishay HPP sample testing under

certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are

encouraged to perform testing in actual proposed packaged

and use conditions. Vishay HPP die products are tested

using Vishay HPP-based quality assurance procedures and

are manufactured using Vishay HPP’s established

processes. Programs for customer-specified testing are

available upon request. Vishay HPP has experienced

assembly yields of generally 95 % or greater for individual

die; however, customer’s results may vary. Estimates such

as those described and set forth in this datasheet for

semiconductor die will vary depending on a number of

packaging, handling, use and other factors. Sold die may not

perform on an equivalent basis to standard package

products and are therefore offered with a limited warranty as

described in Vishay HPP’s applicable standard terms and

conditions of sale. All Vishay HPP die sales are subject to

Vishay HPP’s applicable standard terms and conditions of

sale, which are available upon request.

ELECTRICAL CHARACTERISTICS - WAFER FORM (T_J= 25 °C)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

1.2

UNITS

Forward voltage

V_FM

I_F= 10 A

600

Reverse breakdown voltage

Reverse leakage current

V_BR

I_R= 200 µA

I_RM

V_RRM= 600 V

250

µA

MECHANICAL DATA

Nominal back metal composition, thickness

Nominal front metal composition, thickness

Dimensions

Cr-Ni-Ag (1 kA - 2 kA - 3 kA)

99 % Al, 1 % Si (3 microns)

6.53 mm x 6.53 mm (0.257" x 0.257" [see drawing])

125 mm, with standard < 100 > flat

15 0.4 mils

Wafer diameter

Wafer thickness

Relevant die mechanical drawing number

Minimum street width

01-5171

100 microns

Reject ink dot size

0.25 mm diameter minimum

Recommended storage environment

Reference packaged part

Store in original container, in dessicated nitrogen, with no contamination

50MT060ULSTA

Document Number: 93910

Revision: 18-Jul-07

For technical questions, contact: die-wafer@vishay.com

www.vishay.com

12 3 4

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型号	品牌	获取价格	描述	数据表
H2257H06A5D	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, 6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1
H2257H06A5F	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, 6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1
H2257H06A5TR	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, Silicon, 6.53 X 6.53 MM, ROHS COMPLIANT, DIE-1
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