Datasheet > H2216

H2216

更新时间： 2024-11-18 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
3页	180K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H2216 数据手册

N PN S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H2216

█ APPLICATIONS

TV FINAL PICTURE IF AMPLIFIER APPLICATIONS.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

T_stg——Storage Temperature………………………… -55~150℃

T_j——Juncttion Temperature…………………………………150℃

P_C——Collector Dissipation…………………………………300mW

V_CBO——Collector-Base Voltage………………………………50V

V_CEO——Collector-Emitter Voltage……………………………45V

V_EBO——Emitter-Base Voltage………………………………4V

I_C——Collector Current…………………………………………50mA

Ie——Emitter Current…………………………………………-50mA

TO-92

1―Base，B

2―Emitter，E

3―Collector，C

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min Typ Max

Unit

Test Conditions

BVCBO

BVCEO

BVEBO

ICBO

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter- Base Breakdown Voltage

Collector Cut-off Current

IC=100μA，IE=0

IC=10mA，IB=0

IE=100μA，IC=0

0.1 μA VCB=30V, IE=0

0.1 μA VEB=3V, IC=0

IEBO

Emitter Cut-off Current

HFE

DC Current Gain

140

0.2

1.5

2.0

VCE=12.5V, IC=12.5mA

VCE(sat） Collector- Emitter Saturation Voltage

IC=15mA, IB=1.5mA

IC=15mA,IB=1.5mA

VCB=10V,IE=0，f=30MHz

VBE(sat)

Cob

Base- Emitter Saturation Voltage

Output Capacacitance

0.8

300

Current Gain-Bandwidth Product

MHz VCE=12.5V, IC=12.5mA

Vcc=12.5V, IE=-12.5mA,

f=45MHz

Gpe

Power Gain（Fig）

12 3

中文翻译

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