Datasheet > H1MQ

H1MQ

更新时间： 2024-11-13 17:01:59

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
5页	239K
描述
SOD-123FL

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中文翻译

获取价格

数据手册

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H1MQ 数据手册

RoHS

H1MQ

COMPLIANT

Surface Mount High Efficient Rectifier

Features

● Low profile package

● Ideal for automated placement

● Glass passivated chip junction

● Fast switching for high efficiency

● High forward surge capability

● Meets MSL level 1, per J-STD-020, LF maximum peak

of 260 °C

● Part no. with suffix “Q” means AEC-Q101 qualified

Typical Applications

For use in high efficient switching rectification of power supply,

inverters, converters, and freewheeling diodes for

consumer automotive and telecommunication.

Mechanical Date

●

ackage: SOD-123FL

Molding compound meets UL 94 V-0 flammability

rating, RoHS-compliant, halogen-free

● Terminals: Tin plated leads, solderable per

J-STD-002 and JESD22-B102

●

Cathode line denotes the cathode end

Polarity:

(T =25℃ Unless otherwise specified

■

Maximum Ratings

）

PARAMETER

SYMBOL

UNIT

H1MQ

H1M

Device marking code

V_RRM

Maximum Repetitive Peak Reverse Voltage

1000

Average rectified output current

@60Hz Half-sine wave, Resistance load,

T_L(Fig.1)

I_O

1.0

Forward Surge Current (Non-repetitive)

@60Hz Half-sine wave,1 cycle, T_J=25℃

I_FSM

T_stg

T_J

Storage temperature

Junction temperature

-55 ~ +150

℃

（T =25℃ Unless otherwise specified）

■Electrical Characteristics

PARAMETER

SYMBOL

H1MQ

1.7

UNIT

TEST CONDITIONS

V_F

I_F=1.0A

Maximum instantaneous forward voltage

Maximum reverse recovery time

I_F=0.5A，I_R=1.0A,

T_RR

I_rr=0.25A

=25℃

T_J

Maximum DC reverse current at

rated DC blocking voltage per diode@ V_RM=V_RRM

I_R

μA

100

=125℃

T_J

Typical junction capacitance

C_J

V_R=4V,f=1Mhz

1 / 5

Yangzhou Yangjie Electronic Technology Co., Ltd.

S-S5529

Rev.1.0,04-Nov-23

www.21yangjie.com

12 3 4 5

中文翻译

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