RoHS
H1AFS THRU H1MFS
COMPLIANT
Surface Mount High Efficient Rectifier
Features
● Low profile package
● Ideal for automated placement
● Glass passivated chip junction
● High forward surge capability
● Super fast reverse recovery time
● Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Typical Applications
For use in high frequency rectification of power
supplies, inverters, converters, and freewheeling diodes for
consumer, and telecommunication.
Mechanical Data
●
ackage: SMAF
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads, solderable per
J-STD-002 and JESD22-B102
●
Cathode line denotes the cathode end
Polarity:
(Ta=25℃ Unless otherwise specified)
■Maximum Ratings
H1AFS
H1AFS
50
H1BFS
H1BFS
100
H1DFS
H1DFS
200
H1GFS
H1GFS
400
H1JFS
H1JFS
600
H1KFS
H1KFS
800
H1MFS
H1MFS
1000
PARAMETER
SYMBOL UNIT
Device marking code
V
V
V
V
V
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
RRM
RMS
35
70
140
280
420
560
700
V
50
100
200
400
600
800
1000
Maximum DC blocking Voltage
DC
Average rectified output current
I
A
1.0
30
O
@60Hz sine wave, resistance load, TL (Fig.1)
Forward Surge Current (Non-repetitive)
@60Hz Half-sine wave,1 cycle, Tj=25℃
Forward Surge Current (Non-repetitive)
IFSM
A
60
@1ms, square wave, 1 cycle, Tj=25℃
Current squared time
@1ms≤t≤8.3ms Tj=25℃
A2s
I2t
3.735
T
-55 ~ +150
-55 ~ +150
Storage temperature
stg
℃
℃
T
j
Junction temperature
(T =25℃ Unless otherwise specified)
■Electrical Characteristics
a
H1AFS H1BFS H1DFS H1GFS H1JFS H1KFS H1MFS
PARAMETER
SYMBOL
UNIT TEST CONDITIONS
Maximum instantaneous
forward voltage
V
I
=1.0A
FM
V
1.0
1.3
1.7
75
F
IF=0.5A,IR=1.0A,
Irr=0.25A
Maximum reverse recovery time
trr
ns
50
5.0
T =25℃
j
Maximum DC reverse current at
rated DC blocking voltage
I
μA
R
100
T =125℃
j
Measured at 1MHz and
Applied Reverse
Typical junction capacitance
Cj
pF
15
10
7
Voltage of 4.0 V.D.C
1 / 5
S-S1703
Rev. 2.5, 23-Nov-21
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com