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H1616 PDF预览

H1616

更新时间: 2024-11-02 07:02:31
品牌 Logo 应用领域
华汕 - HUASHAN 晶体晶体管
页数 文件大小 规格书
3页 111K
描述
NPN SILICON TRANSISTOR

H1616 数据手册

 浏览型号H1616的Datasheet PDF文件第2页浏览型号H1616的Datasheet PDF文件第3页 
NPN S I L I C O N T R A N S I S T O R  
Shantou Huashan Electronic Devices Co.,Ltd.  
H1616  
APPLICATIONS  
Audio frequencypower Aamplifier& Medium  
Speed switching Low frequencypower amplifier.  
ABSOLUTE MAXIMUM RATINGSTa=25℃)  
TO-92  
Ts tg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃  
Tj— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃  
PC— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 750mW  
VCBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 60V  
VCEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 50V  
VEBO — — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 6V  
IC— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 1A  
ICP— — Collector CurrentPulse)⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 2A  
1EmitterE  
2CollectorC  
3BaseB  
ELECTRICAL CHARACTERISTICSTa=25℃)  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Characteristics  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Min  
Typ  
Max  
Unit  
Test Conditions  
60  
50  
6
V IC=10μA,IE=0  
V IC=1mA,IB=0  
V IE=10μA,IC=0  
100 nA VCB=60V, IE=0  
100 nA VEB=6V, IC=0  
IEBO  
Emitter Cut-off Current  
HFE1DC Current Gain  
135  
81  
600  
VCE=2V, IC=100mA  
VCE=2V, IC=1A  
HFE2DC Current Gain  
VCE(sat) Collector- Emitter Saturation Voltage  
VBE(sat) Base-Emitter Saturation Voltage  
VBE(on) Base-Emitter On Voltage  
0.15 0.3 V IC=1A, IB=50mA  
0.9 1.2 V IC=1A, IB=50mA  
600 640 700 mV VCE=2V, IC=50mA  
fT  
Current Gain-Bandwidth Product  
Output Capacitance  
100 160  
19  
MHz VCE=2V, IC=100mA  
Cob  
pF VCB=10V,IE=0,f=1MHz  
hFE Classification  
Y
G
L
135270  
200400  
300600  

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