Datasheet > H1609

H1609

更新时间： 2024-11-01 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	112K
描述
NPN SILICON TRANSISTOR

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中文翻译

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数据手册

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H1609 数据手册

NPN S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H1609

█ APPLICATIONS

. Audio Power Amplifie.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-126ML

T_stg——Storage Temperature………………………… -45~150℃

T_j——Junction Temperature……………………………… 150℃

P_C——Collector Dissipation（T_A=25℃）………………… 1.25W

V_CBO——Collector-Base Voltage………………………… 160V

V_CEO——Collector-Emitter Voltage……………………… 160V

V_EBO——Emitter-Base Voltage……………………………… 5V

I_C——Collector Current……………………………………100mA

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

BVCBO Collector-Base Breakdown Voltage

BVCEO Collector-Emitter Breakdown Voltage 160

BVEBO Emitter-Base Breakdown Voltage

160

I_C=10μA, I_E=0

I_C=1mA, I_B=0

I_E=10μA，I_C=0

Collector Cut-off Current

ICBO

10 μA V_CB=140V, I_E=0

HFE（1^）DC Current Gain

HFE（2^）DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

320

V_CE=5V, I_C=10mA

V_CE=5V, I_C=1mA

I_C=30mA, I_B=3mA

Current Gain-Bandwidth Product

140

MHz V_CE=5V, I_C=10mA,

Cob

Output Capacitance

3.8 pF V_CB=10V, I_E=0,f=1MHz

█ h^FEClassification

60—120

100—200

160—320

中文翻译

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