Datasheet > H1426

H1426

更新时间： 2024-09-30 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	243K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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H1426 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H1426

█ APPLICATIONS

DC-DC Convertor

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 750mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -20V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -20V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6V

1―Emitter，E

2―Collector，C

3―Base，B

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -3A

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 300mA

I_B— — Base Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -200mA

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Characteristics

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Min

Typ

Max

Unit

Test Conditions

-20

-6

I_C=-50μA, I =0

I_C=-1mA, I_B=0

I_E=-10μA，I_C=0

V_CB=-20V, I_E=0

V_EB=-5V, I_C=0

-0.1 μA

390

IEBO

Emitter Cut-off Current

HFE

DC Current Gain

V_CE=-2V, I_C=-100mA

I_C=-2A, I_B=-100mA

VCE(sat)

Collector- Emitter Saturation Voltage

-0.5 V

V_CE=-2V, I_C=-500mA,

f=100MHz

Current Gain-Bandwidth Product

240

MHz

Cob

Output Capacitance

pF V_CB=-10V, I_E=0，f=1MHz

█ hFE Classification

82— 180

120— 270

180— 390

中文翻译

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