Datasheet > H13001

H13001

更新时间： 2024-09-16 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
1页	84K
描述
NPN SILICON TRANSISTOR

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中文翻译

获取价格

数据手册

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H13001 数据手册

NPN S I LI C O N TRAN S I STO R

Shantou Huashan Electronic Devices Co.,Ltd.

H13001

█ HIGH VOLTAGE SWITCH MODE APPLICICATIONS

High Speed Switching

Suitable for Switching Regulator and Montor Control

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 10W

1―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 600V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 400V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 9V

2―Collector，C

3― Emitter，E

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 0.25A

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

BVCBO

BVCEO

BVEBO

ICBO

600

400

I_C=1mA, IE=0

I_C=10mA, IB=0

I_E=1mA， I_C=0

100 μA V_CB=500V, I_E=0

100 μA V_EB=9V, I_C=0

Emitter-Base Cut-off Current

IEBO

HFE

DC Current Gain

V_CE=10V, I_C=20mA

I_C=100mA, I_B=20mA

I_C=100mA, IB=20mA

VCE(sat)

VBE(sat)

Collector- Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain-Bandwidth Product

0.6

1.2

MHz V_CE=10V, I_C=20mA

█ hFE Classification

10-16

19-26

24-31

14-21

29-40

中文翻译

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