Datasheet > H1300

H1300

更新时间： 2024-11-06 07:02:31

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
2页	69K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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H1300 数据手册

PNP S I LI C O N TRAN S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H1300

█

STROBE FLASH APPLICATIONS

MEDIUM POWER AMPLIFIER APPLICATIONS

TO-92

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 750mW

1―Emitter，E

2―Collector，C

3―Base，B

_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -20V

_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -10V

_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -2A

I_CP— — Collector Current（Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -5A

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

Characteristics

Min

Typ

Max Unit

Test Conditions

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

DC Current Gain

BVCBO

BVCEO

BVEBO

HFE(1)

HFE(2)

VCE(sat)

VBE

-20

-10

-6

I_C=-100μA, I_E=0

I_C=-10mA, I_B=0

I_E=-1mA，I_C=0

140

600

V_CE=-1V, I_C=-500mA

V_CE=-1V, I_C=-2A

I_C=-2A, I_B=-50mA

V_CE=-1V, I_C=-2A

Collector- Emitter Saturation Voltage

Base-Emitter Voltage

-0.5 V

-1.5 V

Collector Cut-off Current

ICBO

-100 nA V_CB=-20V, I_E=0

-100 nA V_CE=-10V, I_B=0

-100 nA V_EB=-6V, I_C=0

MHz V_CE=-1V, I_C=-0.5A

Collector Cut-off Current

ICEO

IEBO

Emitter Cut-off Current

Current Gain-Bandwidth Product

Output Capacitance

140

Cob

pF V_CB=-10V, I_E=0，f=1MHz

█ hFE Classification

140— 280

200— 400

300— 600

中文翻译

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