Datasheet > H12N65

H12N65

更新时间： 2024-09-28 12:24:07

品牌	Logo	应用领域
HSMC		/
页数	文件大小	规格书
6页	206K
描述
N-Channel Power MOSFET (650V,12A)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

H12N65 数据手册

Spec. No. : MOS200902

Issued Date : 2009.03.24

Revised Date :2009.08.05

Page No. : 1/6

HI-SINCERITY

MICROELECTRONICS CORP.

H12N65 Series

Tab

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

N-Channel Power MOSFET (650V,12A)

Pin 2 & Tab: Drain

Pin 3: Source

Applications

• Switch Mode Power Supply

• Uninterruptable Power Supply

• High Speed Power Switching

3-Lead TO-220FP)

Plastic Package

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

Features

• H12N65 Series is a High voltage NChannel enhancement mode power MOSFET

chip fabricated in advanced silicon epitaxial planar technology

• Advanced termination scheme to provide enhanced voltageblocking capability

• Avalanche Energy Specified

H12N65F Series Symbol

• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;

• The packaged product is widely used in AC-DC power suppliers, DCDC converters and

Hbridge PWM motor drivers

Absolute Maximum Ratings

Symbol

V_DSS

I_D

Parameter

Value

Units

Drain-Source Voltage

650

Drain Current (V_GS@10V, T_C=25^oC)

Gate-to-Source Voltage

V_GS

±30

TO-220AB

TO-220FP

TO-220AB

TO-220FP

175

Total Power Dissipation (T_C=25^oC)

P_D

1.43

W/°C

0.41

Linear Derating Factor

E_AS

I_AR

Single Pulse Avalanche Energy^*2

Avalanche Current^*1

990

E_AR

T_J

Repetitive Avalanche Energy^*1

Operating Junction Temperature Range

Storage Temperature Range

-55 to 150

°C

T_stg

*1: Repetitive rating; pulse width limited by max. junction temperature

*2: Starting T_J=25°C, L=1.2mH, R_G=25Ω, I_AS=10A

*3: I_SD≤14A, di/dt≤130A/us, V_DD≤V_(BR)DSS, T_J≤150°C

Thermal Characteristics

Symbol

Parameter

Value

Units

°C/W

TO-220AB

TO-220FP

1.3

Thermal Resistance Junction to Case (Max.)

Thermal Resistance Junction to Ambient (Max.)

Rθ_JC

Rθ_JA

H10N65 Series

HSMC Product Specification

12 3 4 5 6

中文翻译

下载PDF

与H12N65相关器件

型号	品牌	获取价格	描述	数据表
H12-PAA-100	AMPHENOL	获取价格	Telecom and Datacom Connector, 68 Contact(s), Male, IDC Terminal, Plug
H12-PBA-100	AMPHENOL	获取价格	Telecom and Datacom Connector, 68 Contact(s), Male, IDC Terminal, Plug
H12-PCA-100	AMPHENOL	获取价格	Telecom and Datacom Connector, 68 Contact(s), Male, IDC Terminal, Plug
H12P-SHF-AA	ETC	获取价格	Disconnectable Crimp style connectors
H12P-SHF-AA	JST	获取价格	受保护的折叠梁端子有停止过应力功能，提供高接触压力。两面接触构造br>*接线柱宽度较大
H12S05/200R	ETC	获取价格	Analog IC
H12S05/200W	ETC	获取价格	Analog IC
H12S12/125R	ETC	获取价格	Analog IC
H12S12/125W	ETC	获取价格	Analog IC
H12S15/100W	ETC	获取价格	Analog IC