Spec. No. : MOS200902
Issued Date : 2009.01.20
Revised Date :
HI-SINCERITY
MICROELECTRONICS CORP.
Page No. : 1/4
H12N60F
H12N60F
N-Channel Power MOSFET (600V,12A)
3-Lead TO-220FP)
Plastic Package
Package Code: F
Pin 1: Gate
Applications
Pin 2: Drain
Pin 3: Source
• Switch Mode Power Supply
• Uninterruptable Power Supply
• High Speed Power Switching
3
2
1
H12N60F Series Symbol
D
Features
• H10N60F is a High voltage NChannel enhancement mode power MOSFET
chip fabricated in advanced silicon epitaxial planar technology
• Advanced termination scheme to provide enhanced voltageblocking capability
• Avalanche Energy Specified
G
S
• Source to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode;
• The packaged product is widely used in AC-DC power suppliers, DCDC converters and Hbridge PWM motor drivers
Absolute Maximum Ratings
Symbol
VDSS
Parameter
Value
600
12
Units
V
Drain-Source Voltage
Continuous Drain Current (VGS@10V, TC=25oC)
Continuous Drain Current (VGS@10V, TC=100oC)
Pulsed Drain Current*1
A
ID
7.6
A
IDM
40
A
VGS
Gate-to-Source Voltage
V
±30
TO-220AB
175
50
Total Power Dissipation (TC=25oC)
W
TO-220FP
TO-220AB
TO-220FP
PD
1.43
0.41
Linear Derating Factor
W/°C
EAS
IAR
Single Pulse Avalanche Energy*2
Avalanche Current*1
Repetitive Avalanche Energy*1
Operating Junction Temperature Range
Storage Temperature Range
68
12
66
mJ
A
EAR
TJ
mJ
°C
°C
-55 to 150
-55 to 150
Tstg
*1: Repetitive rating; pulse width limited by max. junction temperature
*2: Starting TJ=25°C, L=1.2mH, RG=25Ω, IAS=10A
*3: ISD≤14A, di/dt≤130A/us, VDD≤V(BR)DSS, TJ≤150°C
Thermal Characteristics
Symbol
Parameter
Value
Units
TO-220AB
TO-220FP
1.3
5
Thermal Resistance Junction to Case (Max.)
Thermal Resistance Junction to Ambient (Max.)
RθJC
RθJA
°C/W
°C/W
62
H10N60F
HSMC Product Specification