Datasheet > H11F3M

H11F3M

更新时间： 2024-09-26 11:09:19

品牌	Logo	应用领域
安森美 - ONSEMI		光电
页数	文件大小	规格书
10页	333K
描述
6引脚DIP双向模拟FET输出光电耦合器

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数据手册

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H11F3M 数据手册

DATA SHEET

www.onsemi.com

Photo FET Optocouplers

PDIP6 8.51x6.35, 2.54P

CASE 646BX

H11F1M, H11F2M, H11F3M

General Description

The H11FXM series consists of a Gallium−Aluminum−Arsenide

IRED emitting diode coupled to a symmetrical bilateral silicon

photo−detector. The detector is electrically isolated from the input

and performs like an ideal isolated FET designed for distortion−free

control of low level AC and DC analog signals. The H11FXM series

devices are mounted in dual in−line packages.

PDIP6 8.51x6.35, 2.54P

CASE 646BY

PDIP6 8.51x6.35, 2.54P

CASE 646BZ

Features

• As a Remote Variable Resistor:

♦ ≤ 100 W to ≥ 300 MW

♦ ≤15 pF Shunt Capacitance

♦ ≥100 GW I/O Isolation Resistance

• As an Analog Switch:

MARKING DIAGRAM

♦ Extremely Low Offset Voltage

♦ 60 V

Signal Capability

pk−pk

H11F1

VXYYQ

♦ No Charge Injection or Latch−Up

♦ UL Recognized (File #E90700)

• These are Pb−Free Devices

Application

H11F1 = Specific Device Code

• As a Remote Variable Resistor:

♦ Isolated Variable Attenuator

♦ Automatic Gain Control

= VDE Mark (Only appears on parts ordered

with VDE option − See order entry table)

= One−Digit Year Code, e.g., “7”

= Two Digit Work Week Ranging

from “01” to “53”

♦ Active Filter Fine Tuning/Band Switching

= Assembly Package Code

• As an Analog Switch:

♦ Isolated Sample and Hold Circuit

♦ Multiplexed, Optically Isolated A/D Conversion

SCHEMATIC

OUTPUT

ANODE

TERM.

CATHODE

OUTPUT

TERM.

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

Publication Order Number:

September, 2022 − Rev. 3

H11F3M/D

12 3 4 5 6 7...10

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H11F3SM	ONSEMI	获取价格	6引脚DIP双向模拟FET输出光电耦合器
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