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H11F1M PDF预览

H11F1M

更新时间: 2024-11-19 11:09:19
品牌 Logo 应用领域
安森美 - ONSEMI 输出元件光电
页数 文件大小 规格书
10页 333K
描述
6 引脚 DIP 双向模拟 FET 输出光耦合器

H11F1M 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:DIP-6Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.40.80.00
风险等级:0.82其他特性:UL RECOGNIZED
配置:SINGLE最大正向电流:0.06 A
最大正向电压:1.75 V最大绝缘电压:7500 V
JESD-609代码:e3安装特点:THROUGH HOLE MOUNT
元件数量:1最大通态电流:1 A
最高工作温度:100 °C最低工作温度:-40 °C
光电设备类型:FET OUTPUT OPTOCOUPLER最大功率耗散:0.1 W
最长响应时间:0.000025 s子类别:Optocoupler - Transistor Outputs
表面贴装:NO端子面层:Tin (Sn)
Base Number Matches:1

H11F1M 数据手册

 浏览型号H11F1M的Datasheet PDF文件第2页浏览型号H11F1M的Datasheet PDF文件第3页浏览型号H11F1M的Datasheet PDF文件第4页浏览型号H11F1M的Datasheet PDF文件第5页浏览型号H11F1M的Datasheet PDF文件第6页浏览型号H11F1M的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
Photo FET Optocouplers  
PDIP6 8.51x6.35, 2.54P  
CASE 646BX  
H11F1M, H11F2M, H11F3M  
6
6
1
1
General Description  
The H11FXM series consists of a GalliumAluminumArsenide  
IRED emitting diode coupled to a symmetrical bilateral silicon  
photodetector. The detector is electrically isolated from the input  
and performs like an ideal isolated FET designed for distortionfree  
control of low level AC and DC analog signals. The H11FXM series  
devices are mounted in dual inline packages.  
PDIP6 8.51x6.35, 2.54P  
CASE 646BY  
PDIP6 8.51x6.35, 2.54P  
CASE 646BZ  
Features  
6
As a Remote Variable Resistor:  
1
100 W to 300 MW  
15 pF Shunt Capacitance  
100 GW I/O Isolation Resistance  
As an Analog Switch:  
MARKING DIAGRAM  
Extremely Low Offset Voltage  
ON  
60 V  
Signal Capability  
pkpk  
H11F1  
VXYYQ  
No Charge Injection or LatchUp  
UL Recognized (File #E90700)  
These are PbFree Devices  
Application  
H11F1 = Specific Device Code  
As a Remote Variable Resistor:  
Isolated Variable Attenuator  
Automatic Gain Control  
V
= VDE Mark (Only appears on parts ordered  
with VDE option See order entry table)  
= OneDigit Year Code, e.g., “7”  
= Two Digit Work Week Ranging  
from “01” to “53”  
X
YY  
Active Filter Fine Tuning/Band Switching  
Q
= Assembly Package Code  
As an Analog Switch:  
Isolated Sample and Hold Circuit  
Multiplexed, Optically Isolated A/D Conversion  
SCHEMATIC  
OUTPUT  
ANODE  
6
5
4
1
2
3
TERM.  
CATHODE  
OUTPUT  
TERM.  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 6 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
September, 2022 Rev. 3  
H11F3M/D  

H11F1M 替代型号

型号 品牌 替代类型 描述 数据表
H11F1VM ONSEMI

完全替代

6 引脚 DIP 双向模拟 FET 输出光耦合器
H11F1SR2M ONSEMI

完全替代

6 引脚 DIP 双向模拟 FET 输出光耦合器
H11F1SM ONSEMI

完全替代

6 引脚 DIP 双向模拟 FET 输出光耦合器

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