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H11B815 PDF预览

H11B815

更新时间: 2024-11-05 22:09:27
品牌 Logo 应用领域
QT 光电
页数 文件大小 规格书
4页 57K
描述
4-PIN PHOTODARLINGTON OPTOCOUPLERS

H11B815 技术参数

生命周期:TransferredReach Compliance Code:unknown
风险等级:5.77其他特性:UL RECOGNIZED
Coll-Emtr Bkdn Voltage-Min:35 V配置:SINGLE
标称电流传输比:600%最大暗电源:1000 nA
最大正向电流:0.08 A最大绝缘电压:5300 V
元件数量:1最高工作温度:100 °C
最低工作温度:-55 °C光电设备类型:DARLINGTON OUTPUT OPTOCOUPLER
Base Number Matches:1

H11B815 数据手册

 浏览型号H11B815的Datasheet PDF文件第2页浏览型号H11B815的Datasheet PDF文件第3页浏览型号H11B815的Datasheet PDF文件第4页 
4-PIN PHOTODARLINGTON  
OPTOCOUPLERS  
H11B815  
DESCRIPTION  
The H11B815 consists of a gallium arsenide infrared  
emitting diode driving a silicon Darlington phototransistor  
in a 4-pin dual in-line package.  
4
4
FEATURES  
• Compact 4-pin package  
1
• Current Transfer Ratio: 600% minimum (at IF = 1 mA)  
• High isolation voltage between input and output (5300  
VRMS)  
1
• UL recognized (File # E90700)  
4
1
1
2
4
3
ANODE  
COLLECTOR  
EMITTER  
APPLICATIONS  
Power Supply Monitors  
Relay Contact Monitor  
Telephone/Telegraph Line  
Receiver  
CATHODE  
Twisted Pair Line Receiver  
Digital Logic/Digital Logic  
ABSOLUTE MAXIMUM RATINGS (No derating required up to 85°C)  
Parameter  
Symbol  
Value  
Units  
TOTAL DEVICE  
TSTG  
-55 to +150  
°C  
Storage Temperature  
Operating Temperature  
TOPR  
TSOL  
PD  
-55 to +100  
260 for 10 sec  
250  
°C  
°C  
Lead Solder Temperature  
Total Device Power Dissipation @ TA = 25°C  
EMITTER  
mW  
IF  
80  
mA  
DC/Average Forward Input Current  
Reverse Input Voltage  
VR  
6
1
V
A
Forward Current - Peak (1µs pulse, 300pps)  
LED Power Dissipation @ TA = 25°C  
Derate above 25°C  
IF(pk)  
140  
1.33  
mW  
mW/°C  
PD  
DETECTOR  
VCEO  
35  
V
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Continuous Collector Current  
Detector Power Dissipation @ TA = 25°C  
Derate above 25°C  
VECO  
IC  
6
V
mA  
200  
200  
2.0  
mW  
PD  
mW/°C  
1/25/00  
200029A  

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