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H11AA4 PDF预览

H11AA4

更新时间: 2024-01-26 07:17:24
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体光电晶体管
页数 文件大小 规格书
7页 152K
描述
6-Pin DIP Optoisolators AC Input/Transistor Output

H11AA4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:ROHS COMPLIANT, SURFACE MOUNT, PLASTIC PACKAGE-6
Reach Compliance Code:compliantHTS代码:8541.40.80.00
风险等级:5.62其他特性:UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min:35 V配置:SINGLE
当前传输比率-最小值:100%标称电流传输比:100%
最大暗电源:100 nA最大正向电流:0.05 A
最大正向电压:1.5 V最大绝缘电压:5300 V
安装特点:SURFACE MOUNT元件数量:1
最高工作温度:100 °C最低工作温度:-30 °C
光电设备类型:AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.3 W
子类别:Optocoupler - Transistor Outputs表面贴装:YES
Base Number Matches:1

H11AA4 数据手册

 浏览型号H11AA4的Datasheet PDF文件第2页浏览型号H11AA4的Datasheet PDF文件第3页浏览型号H11AA4的Datasheet PDF文件第4页浏览型号H11AA4的Datasheet PDF文件第5页浏览型号H11AA4的Datasheet PDF文件第6页浏览型号H11AA4的Datasheet PDF文件第7页 
Order this document  
by H11AA1/D  
SEMICONDUCTOR TECHNICAL DATA  
GlobalOptoisolator  
[CTR = 20% Min]  
[CTR = 10% Min]  
The H11AA1, H11AA2, H11AA3, H11AA4 devices consist of two gallium–  
arsenide infrared emitting diodes connected in inverse parallel, optically  
coupled to a monolithic silicon phototransistor detector.  
[CTR = 50% Min]  
[CTR = 100% Min]  
Built–In Protection for Reverse Polarity  
Guaranteed CTR Minimum Values as High as 100%  
Guaranteed Minimum/Maximum Symmetry Limits  
*Motorola Preferred Devices  
To order devices that are tested and marked per VDE 0884 requirements, the  
suffix ”V” must be included at end of part number. VDE 0884 is a test option.  
STYLE 8 PLASTIC  
Applications  
Detecting or Monitoring ac Signals  
AC Line/Digital Logic Isolation  
Programmable Controllers  
6
1
Interfacing and coupling systems of different potentials and impedances  
AC/DC — Input Modules  
STANDARD THRU HOLE  
CASE 730A–04  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
INPUT LED  
SCHEMATIC  
Forward Current — Continuous (RMS)  
I
F
60  
mA  
1
2
3
6
5
4
LED Power Dissipation @ T = 25°C  
with Negligible Power in Output Detector  
Derate above 25°C  
P
120  
mW  
A
D
1.41  
mW/°C  
OUTPUT TRANSISTOR  
Collector–Emitter Voltage  
Emitter–Base Voltage  
NC  
V
V
V
30  
5
Volts  
Volts  
Volts  
mA  
CEO  
EBO  
CBO  
PIN 1. INPUT LED  
2. INPUT LED  
3. NO CONNECTION  
4. EMITTER  
Collector–Base Voltage  
Collector Current — Continuous  
70  
I
C
150  
150  
5. COLLECTOR  
6. BASE  
Detector Power Dissipation @ T = 25°C  
P
D
mW  
A
with Negligible Power in Input LEDs  
Derate above 25°C  
1.76  
mW/°C  
TOTAL DEVICE  
(1)  
Isolation Surge Voltage  
(Peak ac Voltage, 60 Hz, 1 sec Duration)  
V
ISO  
7500  
Vac(pk)  
Total Device Power Dissipation @ T = 25°C  
Derate above 25°C  
P
D
250  
2.94  
mW  
mW/°C  
A
(2)  
Ambient Operating Temperature Range  
T
55 to +100  
55 to +150  
260  
°C  
°C  
°C  
A
(2)  
Storage Temperature Range  
T
stg  
Soldering Temperature (10 sec, 1/16from case)  
T
L
1. Isolation surge voltage is an internal device dielectric breakdown rating.  
1. For this test, Pins 1 and 2 are common, and Pins 4, 5 and 6 are common.  
2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
GlobalOptoisolator is a trademark of Motorola, Inc.  
REV 1  
Motorola, Inc. 1995  

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