Datasheet > H1116

H1116

更新时间： 2024-11-26 07:02:27

品牌	Logo	应用领域
华汕 - HUASHAN		晶体晶体管
页数	文件大小	规格书
3页	110K
描述
PNP SILICON TRANSISTOR

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中文翻译

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数据手册

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H1116 数据手册

PNP S I L I C O N T R A N S I S T O R

Shantou Huashan Electronic Devices Co.,Ltd.

H1116

█ APPLICATIONS

Audio frequencypower Aamplifier& Medium

Speed switching Low frequencypower amplifier.

█ ABSOLUTE MAXIMUM RATINGS（T_a=25℃）

TO-92

T_stg— — Storage Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -55~150℃

T_j— — Junction Temperature⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 150℃

P_C— — Collector Dissipation⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ 750mW

V_CBO— — Collector-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -60V

V_CEO— — Collector-Emitter Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -50V

V_EBO— — Emitter-Base Voltage⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -6V

I_C— — Collector Current⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -1A

I_CP— — Collector Current（Pulse）⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ ⋯ -2A

1―Emitter，E

2―Collector，C

3―Base，B

█ ELECTRICAL CHARACTERISTICS（T_a=25℃）

Symbol

BVCBO

BVCEO

BVEBO

ICBO

Characteristics

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

Min

Typ

Max

Unit

Test Conditions

-60

-50

-6

V IC=-10μA，IE=0

V IC=-1mA，IB=0

V IE=-10μA，IC=0

-100 nA VCB=-60V, IE=0

-100 nA VEB=-5V, IC=0

IEBO

Emitter Cut-off Current

HFE（1） DC Current Gain

135

600

VCE=-2V, IC=-100mA

VCE=-2V, IC=-1A

HFE（2） DC Current Gain

VCE(sat) Collector- Emitter Saturation Voltage

VBE(sat) Base-Emitter Saturation Voltage

VBE(on) Base-Emitter On Voltage

-0.2 -0.3

-0.9 -1.2

V IC=-1A, IB=-50mA

V IC=-1A， IB=-50mA

-600 -650 -700 mV VCE=-2V， IC=-50mA

Current Gain-Bandwidth Product

Output Capacitance

120

MHz VCE=-2V, IC=-100mA

Cob

pF VCB=-10V,IE=0，f=1MHz

█ hFE Classification

135— 270

200— 400

300— 600

12 3

中文翻译

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