Datasheet > H08N02CTS

H08N02CTS

更新时间： 2024-02-09 04:16:37

品牌	Logo	应用领域
HSMC		/
页数	文件大小	规格书
4页	42K
描述
Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)

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技术参数
数据手册

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H08N02CTS 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

H08N02CTS 数据手册

Spec. No. : MOS200611

Issued Date : 2006.06.01

Revised Date : 2006.06.28

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

H08N02CTS

8-Lead Plastic TSSOP-8

Package Code: TS

Dual N-Channel Enhancement-Mode MOSFET (20V, 8A)

H08N02CTS Symbol & Pin Assignment

Pin 1: Drain

Pin 2 / 3: Source 1

Pin 4: Gate 1

Pin 5: Gate 2

Pin 6 / 7: Source 2

Pin 8: Drain

Features

• R_DS(on)<30mΩ@V_GS=2.5V, I_D=5.5A

• R_DS(on)<20mΩ@V_GS=4.5V, I_D=6.5A

• High Density Cell Design for Ultra Low On-Resistance

• High Power and Current Handing Capability

• Fully Characterized Avalanche Voltage and Current

• Ideal for Li ion Battery Pack Applications

Absolute Maximum Ratings (T_A=25^oC, unless otherwise noted)

Symbol

V_DS

Parameter

Ratings

Units

Drain-Source Voltage

Gate-Source Voltage

V_GS

I_D

±12

Drain Current (Continuous)

Drain Current (Pulsed) ^*1

I_DM

Total Power Dissipation @T_A=25^oC

1.5

P_D

Total Power Dissipation @T_A=75^oC

0.96

T_j, T_stg

R_θJA

Operating and Storage Temperature Range

Thermal Resistance Junction to Ambient (PCB mounted)^*2

-55 to +150

°C

°C/W

*1: Maximum DC current limited by the package under the ambient condition at room temperature.

*2: 1-in²2oz Cu PCB board

H08N02CTS

HSMC Product Specification

12 3 4

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