Datasheet > H07N60F

H07N60F

更新时间： 2024-11-05 03:40:31

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	61K
描述
N-Channel Power Field Effect Transistor

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数据手册

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H07N60F 数据手册

Spec. No. : MOS200604

Issued Date : 2006.02.01

Revised Date : 2006.02.07

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

H07N60 Series Pin Assignment

H07N60 Series

Tab

N-Channel Power Field Effect Transistor

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

H07N60 Series

Symbol:

Features

• Robust High Voltage Termination

• Avalanc he Energy Specified

• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

• Diode is Characterized for Use in Bridge Circuits

• IDSS and V_DS(on)Specified at Elevated Temperature

Absolute Maximum Ratings

Symbol

I_D

Parameter

Drain to Current (Continuous)

Value

Units

I_DM

Drain to Current (Pulsed)

V_GS

Gate-to-Source Voltage (Continue)

±30

Total Power Dissipation (T_C=25^oC)

H07N60E (TO-220AB)

110

H07N60F (TO-220FP)

P_D

Derate above 25^OC

W/°C

W/^oC

H07N60E (TO-220AB)

H07N60F (TO-220FP)

0.58

0.33

T_j

Operating Temperature Range

Storage Temperature Range

-55 to 150

^OC

T_stg

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25^OC

(V_DD=100V, V_GS=10V, I_L=6A, L=10mH, R_G=25Ω)

E_AS

T_L

250

260

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

°C

Note: 1. V_DD=50V, I_D=10A

2. Pulse Width and frequency is limited by T_j(max)and thermal response

H07N60E, H07N60F

HSMC Product Specification

12 3 4 5

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