Datasheet > H04N60F

H04N60F

更新时间： 2024-11-26 03:40:31

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	61K
描述
N-Channel Power Field Effect Transistor

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技术参数
数据手册

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H04N60F 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

H04N60F 数据手册

Spec. No. : MOS200404

Issued Date : 2004.07.01

Revised Date : 2005.09.28

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

H04N60 Series Pin Assignment

H04N60 Series

Tab

N-Channel Power Field Effect Transistor

3-Lead Plastic TO-220AB

Package Code: E

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

Description

This advanced high voltage MOSFET is designed to withstand high

energy in the avalanche mode and switch efficiently. This new high energy

device also offers a drain-to-source diode with fast recovery time.

Designed for high voltage, high speed switching applications such as

power suplies, converters, power motor controls and bridge circuits.

3-Lead Plastic TO-220FP

Package Code: F

Pin 1: Gate

Pin 2: Drain

Pin 3: Source

Features

• Higher Current Rating

• Lower RDS(on)

• Lower Capacitances

• Lower Total Gate Charge

• Tighter VSD Specifications

• Avalanche Energy Specified

H04N60 Series

Symbol:

Absolute Maximum Ratings

Symbol

I_D

Parameter

Drain to Current (Continuous)

Value

Units

I_DM

Drain to Current (Pulsed)

V_GS

Gate-to-Source Voltage (Continue)

Total Power Dissipation (T_C=25^oC)

H04N60E (TO-220AB)

±30

H04N60F (TO-220FP)

P_D

Derate above 25°C

0.56

0.2

H04N60E (TO-220AB)

W/°C

H04N60F (TO-220FP)

T_j, T_stg

E_AS

Operating and Storage Temperature Range

-55 to 150

°C

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C

(V_DD=100V, V_GS=10V, I_L=2A, L=10mH, R_G=25Ω)

250

260

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 10 seconds

T_L

°C

H04N60E, H04N60F

HSMC Product Specification

12 3 4 5

中文翻译

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