5秒后页面跳转
捷配首页

Datasheet > H01N60SI
H01N60SI PDF预览

H01N60SI

更新时间： 2024-11-26 03:40:31
品牌 Logo 应用领域
HSMC 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 63K
描述
N-Channel Power Field Effect Transistor

阅读下载

中文翻译

获取价格

H01N60SI 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：NBase Number Matches：1

H01N60SI 数据手册

 浏览型号H01N60SI的Datasheet PDF文件第2页浏览型号H01N60SI的Datasheet PDF文件第3页浏览型号H01N60SI的Datasheet PDF文件第4页浏览型号H01N60SI的Datasheet PDF文件第5页 
Spec. No. : MOS200501  
Issued Date : 2005.01.01  
Revised Date : 2005.09.28  
Page No. : 1/5  
HI-SINCERITY  
MICROELECTRONICS CORP.  
H01N60S Series Pin Assignment  
H01N60S Series  
N-Channel Power Field Effect Transistor  
Tab  
3-Lead Plastic TO-252  
Package Code: J  
Pin 1: Gate  
Pin 2 & Tab: Drain  
3
2
Description  
1
Pin 3: Source  
This high voltage MOSFET uses an advanced termination scheme to  
provide enhanced voltage-blocking capability without degratding  
performance over time. In addition, this advanced MOSFET is designed to  
withstand high energy in avalanche and commutation modes. The new  
energy efficient design also offers a drain-to-source diode with a fast  
recovery time. Designed for high voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where diode  
speed and commutating safe operating areas are critical and offer  
additional and saafety margin against unexpected voltage transients.  
Tab  
3-Lead Plastic TO-251  
Package Code: I  
Pin 1: Gate  
Pin 2 & Tab: Drain  
Pin 3: Source  
3
2
1
D
H01N60S Series  
Symbol:  
G
Features  
S
• 1A, 600V, RDS(on)=12Ω@VGS=10V  
• Low Gate Charge 15nC(Typ.)  
• Low Crss 4pF(Typ.)  
• Fast Switching  
• Improved dv/dt Capability  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
H01N60SI / H01N60SJ  
Units  
V
Drain-Source Voltage  
600  
1
Drain Current (Continuous TC=25oC)  
Drain Current (Continuous TC=100oC)  
Drain Current (Pulsed) *1  
A
ID  
0.6  
4
A
IDM  
A
VGS  
Gate-Source Voltage  
V
±30  
Single Pulse Avalanche Energy  
(L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C)  
EAS  
50  
mJ  
IAR  
EAR  
Avalanche Current *1  
1
2.8  
A
mJ  
V/nS  
V
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt *2  
Gate-to-Source Voltage (Continue)  
Total Power Dissipation (TA=25oC)  
Total Power Dissipation (TC=25oC)  
Derate above 25°C  
dv/dt  
VGS  
4.5  
±20  
2.5  
W
28  
W
PD  
0.22  
-55 to +150  
W/°C  
°C  
Tj, Tstg  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering Purposes, 1/8”  
from case for 5 seconds  
300  
°C  
*1: Repetitive Rating : Pulse width limited by maximum junction temperature  
*2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25oC  
H01N60SI, H01N60SJ  
HSMC Product Specification  
12345

中文翻译

下载PDF

与H01N60SI相关器件

型号 品牌 获取价格 描述 数据表
H01N60SJ HSMC

获取价格

 		N-Channel Power Field Effect Transistor
H0208 ETC

获取价格

 		Interface IC
H0216 ETC

获取价格

 		Interface IC
H0220 WEITRON

获取价格

 		ULTRA Fast Recovery High Voltage Rectifiers
H0224 ETC

获取价格

 		Interface IC
H02N60 HSMC

获取价格

 		N-Channel Power Field Effect Transistor
H02N60E HSMC

获取价格

 		N-Channel Power Field Effect Transistor
H02N60F HSMC

获取价格

 		N-Channel Power Field Effect Transistor
H02N60I HSMC

获取价格

 		N-Channel Power Field Effect Transistor
H02N60J HSMC

获取价格

 		N-Channel Power Field Effect Transistor

与H01N60SI相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证