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H01N60J

更新时间： 2024-11-26 10:52:07
品牌 Logo 应用领域
HSMC 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
5页 63K
描述
N-Channel Power Field Effect Transistor

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中文翻译

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H01N60J 技术参数

生命周期：Obsolete包装说明：,
Reach Compliance Code：unknown风险等级：5.84
Is Samacsys：NBase Number Matches：1

H01N60J 数据手册

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Spec. No. : MOS200502  
Issued Date : 2005.03.01  
Revised Date : 2005.09.28  
Page No. : 1/5  
HI-SINCERITY  
MICROELECTRONICS CORP.  
H01N60 Series Pin Assignment  
H01N60 Series  
N-Channel Power Field Effect Transistor  
Tab  
3-Lead Plastic TO-252  
Package Code: J  
Pin 1: Gate  
Pin 2 & Tab: Drain  
3
2
Description  
1
Pin 3: Source  
This high voltage MOSFET uses an advanced termination scheme to  
provide enhanced voltage-blocking capability without degratding  
performance over time. In addition, this advanced MOSFET is designed to  
withstand high energy in avalanche and commutation modes. The new  
energy efficient design also offers a drain-to-source diode with a fast  
recovery time. Designed for high voltage, high speed switching  
applications in power supplies, converters and PWM motor controls,  
these devices are particularly well suited for bridge circuits where diode  
speed and commutating safe operating areas are critical and offer  
additional and saafety margin against unexpected voltage transients.  
Tab  
3-Lead Plastic TO-251  
Package Code: I  
Pin 1: Gate  
Pin 2 & Tab: Drain  
Pin 3: Source  
3
2
1
D
H01N60 Series  
Symbol:  
G
Features  
S
• 1A, 600V, RDS(on)=8Ω@VGS=10V  
• Low Gate Charge 15nC(Typ.)  
• Low Crss 4pF(Typ.)  
• Fast Switching  
• Improved dv/dt Capability  
Absolute Maximum Ratings  
Symbol  
VDSS  
Parameter  
H01N60I / H01N60J  
Units  
V
Drain-Source Voltage  
600  
1
Drain Current (Continuous TC=25oC)  
Drain Current (Continuous TC=100oC)  
Drain Current (Pulsed) *1  
A
ID  
0.6  
4
A
IDM  
A
VGS  
Gate-Source Voltage  
V
±30  
Single Pulse Avalanche Energy  
(L=59mH, IAS=1.1A, VDD=50V, RG=25Ω, Starting TJ=25°C)  
EAS  
50  
mJ  
IAR  
EAR  
Avalanche Current *1  
1
2.8  
A
mJ  
V/nS  
V
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt *2  
Gate-to-Source Voltage (Continue)  
Total Power Dissipation (TA=25oC)  
Total Power Dissipation (TC=25oC)  
Derate above 25°C  
dv/dt  
VGS  
4.5  
±20  
2.5  
W
28  
W
PD  
0.22  
-55 to +150  
W/°C  
°C  
Tj, Tstg  
TL  
Operating and Storage Temperature Range  
Maximum Lead Temperature for Soldering Purposes, 1/8”  
from case for 5 seconds  
300  
°C  
*1: Repetitive Rating : Pulse width limited by maximum junction temperature  
*2: ISD≤1.1A, di/dt≤200A/us, VDD≤BVDSS, Starting TJ=25oC  
H01N60I, H01N60J  
HSMC Product Specification  
12345

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