Datasheet > H01N60

H01N60

更新时间： 2024-01-02 23:56:52

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
5页	63K
描述
N-Channel Power Field Effect Transistor

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技术参数
数据手册

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H01N60 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

H01N60 数据手册

Spec. No. : MOS200502

Issued Date : 2005.03.01

Revised Date : 2005.09.28

Page No. : 1/5

HI-SINCERITY

MICROELECTRONICS CORP.

H01N60 Series Pin Assignment

H01N60 Series

N-Channel Power Field Effect Transistor

Tab

3-Lead Plastic TO-252

Package Code: J

Pin 1: Gate

Pin 2 & Tab: Drain

Description

Pin 3: Source

This high voltage MOSFET uses an advanced termination scheme to

provide enhanced voltage-blocking capability without degratding

performance over time. In addition, this advanced MOSFET is designed to

withstand high energy in avalanche and commutation modes. The new

energy efficient design also offers a drain-to-source diode with a fast

recovery time. Designed for high voltage, high speed switching

applications in power supplies, converters and PWM motor controls,

these devices are particularly well suited for bridge circuits where diode

speed and commutating safe operating areas are critical and offer

additional and saafety margin against unexpected voltage transients.

Tab

3-Lead Plastic TO-251

Package Code: I

Pin 1: Gate

Pin 2 & Tab: Drain

Pin 3: Source

H01N60 Series

Symbol:

Features

• 1A, 600V, R_DS(on)=8Ω@V_GS=10V

• Low Gate Charge 15nC(Typ.)

• Low C_rss4pF(Typ.)

• Fast Switching

• Improved d_v/d_tCapability

Absolute Maximum Ratings

Symbol

V_DSS

Parameter

H01N60I / H01N60J

Units

Drain-Source Voltage

600

Drain Current (Continuous T_C=25^oC)

Drain Current (Continuous T_C=100^oC)

Drain Current (Pulsed) ^*1

I_D

0.6

I_DM

V_GS

Gate-Source Voltage

±30

Single Pulse Avalanche Energy

(L=59mH, I_AS=1.1A, V_DD=50V, R_G=25Ω, Starting T_J=25°C)

E_AS

I_AR

E_AR

Avalanche Current ^*1

2.8

V/nS

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt ^*2

Gate-to-Source Voltage (Continue)

Total Power Dissipation (T_A=25^oC)

Total Power Dissipation (T_C=25^oC)

Derate above 25°C

dv/dt

V_GS

4.5

±20

2.5

P_D

0.22

-55 to +150

W/°C

°C

T_j, T_stg

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purposes, 1/8”

from case for 5 seconds

300

°C

*1: Repetitive Rating : Pulse width limited by maximum junction temperature

*2: I_SD≤1.1A, di/dt≤200A/us, V_DD≤BV_DSS, Starting TJ=25^oC

H01N60I, H01N60J

HSMC Product Specification

12 3 4 5

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