Datasheet > H01N45A

H01N45A

更新时间： 2024-11-27 21:53:55

品牌	Logo	应用领域
HSMC		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
4页	47K
描述
N-Channel Power Field Effect Transistor

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技术参数
数据手册

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H01N45A 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	Base Number Matches：	1

H01N45A 数据手册

Spec. No. : MOS200408

Issued Date : 2004.11.01

Revised Date : 2005.03.10

Page No. : 1/4

HI-SINCERITY

MICROELECTRONICS CORP.

H01N45A Pin Assignment

H01N45A

3-Lead Plastic TO-92

Package Code: A

Pin 1: Gate

N-Channel Power Field Effect Transistor

Pin 2: Drain

Pin 3: Source

Features

• Typical R_DS(on)=4.1Ω

• Extremely High dv/dt Capability

• 100% Avalanche Tested

• Gate Charge Minimized

• New High Voltage Benchmark

Symbol:

Applications

• Switch Mode Low Power Supplies (SMPS)

• Low Power, Low Cost CFL (Compact Fluorescent Lamps)

• Low Power Battery Chargers

Absolute Maximum Ratings

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Drain-Source Voltage (V_GS=0)

Value

450

Units

450

Drain-Gate Voltage (R_GS=20KΩ)

Gate-Source Voltage

Drain Current (Continuous) at T_C=25^oC

Drain Current (Continuous) at T_C=100^oC

Drain Current (Pulsed)

±30

0.5

I_D

0.315

I_DM

Total Power Dissipation at T_C=25^oC

2.5

P_D

Derate Factor

0.025

W/°C

V/ns

°C

dv/dt

Peak Diode recovery Voltage Slope

Operating Junction and Storage Temperature Range

T_j, T_stg

-65 to 150

Avalanche Current, Repetitive or Not-Repetitive (Pulse width

limited by T_JMax.)

I_AR

1.5

Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C

(V_DD=100V, V_GS=10V, I_L=2A, L=10mH, R_G=25Ω)

E_AS

Thermal Data

Symbol

Parameter

Value

120

Units

^oC/W

^oC

R_thj-amb

R_thj-lead

T_L

Thermal Resistance Junction-Ambient (Max.)

Thermal Resistance Junction-Leadt (Max.)

Maximum Lead Temperature for Soldering Purpose

260

H01N45A

HSMC Product Specification

12 3 4

中文翻译

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