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GWM100-01X1-SLSAM

更新时间： 2024-11-19 22:59:47
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 622K
描述
MOSFET 6N-CH 100V 90A ISOPLUS

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中文翻译

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GWM100-01X1-SLSAM 数据手册

 浏览型号GWM100-01X1-SLSAM的Datasheet PDF文件第2页浏览型号GWM100-01X1-SLSAM的Datasheet PDF文件第3页浏览型号GWM100-01X1-SLSAM的Datasheet PDF文件第4页浏览型号GWM100-01X1-SLSAM的Datasheet PDF文件第5页浏览型号GWM100-01X1-SLSAM的Datasheet PDF文件第6页 
GWM 100-01X1  
VDSS  
ID25  
= 100V  
= 90A  
Three phase full Bridge  
with Trench MOSFETs  
in DCB isolated high current package  
RDSon typ. = 7.5mW  
L+  
G3  
G5  
S5  
G1  
S1  
S3  
L1  
L2  
L3  
Straight leads  
Surface Mount Device  
G4  
S4  
G6  
S6  
G2  
S2  
L-  
Applications  
MOSFETs  
Symbol  
VDSS  
Adrives  
• in tomobiles  
Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
100  
20  
V
- electric power steering  
- starter generator  
• in industrial vehicles  
- propulsion drives  
- fork lift drives  
VGS  
V
ID25  
ID90  
TC = 25°C  
TC = 90°C  
90  
68  
A
A
• in battery supplied equipment  
IF25  
IF90  
TC = 25°C (diode)  
TC = 90°C (diode)  
68  
A
A
Features  
• MOSFETs in trench technology:  
- low RDSon  
- optimized intrinsic reverse diode  
• package:  
Symbol  
Conditions  
haracteristic Values  
(TJ = 25°C, unless oerwise specified)  
n. typ. max.  
- high level of integration  
- high current capability 300 A max.  
- aux. terminals for MOSFET control  
- terminals for soldering or welding  
connections  
- isolated DCB ceramic base plate  
with optimized heat transfer  
• Space and weight savings  
1)  
RDSon  
on chip level at  
TJ = 25°C  
TJ = 12
7.5  
14  
8.5  
mW  
mW  
VGS = 10 V; ID = 80 A  
VGS(th)  
IDSS  
VDS = 20 V; ID = 250 µA  
VDS = VDSS; VGS = 0 V  
2.5  
4.5  
1
V
= 25°C  
TJ 125°C  
µA  
mA  
0.1  
IGSS  
VGS  
=
20 V; VDS = 0 V  
0.2  
µA  
Qg  
Qgs  
Qgd  
90  
30  
30  
nC  
nC  
nC  
Package options  
VGS = 10 V; VDS = 6V; ID = 90 A  
• 2 lead frames available  
- straight leads (SL)  
- SMD lead version (SMD)  
td(on)  
tr  
td(off)  
tf  
130  
95  
290  
55  
ns  
ns  
ns  
ns  
inductive load  
VGS = 10 V; VDS = 48 V  
ID = 70 A; RG = 33 Ω;  
TJ = 125°C  
Eon  
Eoff  
Erecoff  
0.4  
0.4  
0.007  
mJ  
mJ  
mJ  
RthJC  
RthJH  
1)  
1.0 K/W  
1.6 K/W  
with heat transfer paste (IXYS test setup)  
= ID·(RDS(on) + 2RPin to Chip)  
1.3  
V
DS  
Recommended replacements: MTI 85W100GC  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110505f  
1 - 6  
123456

中文翻译

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