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GWM100-0085X1-SMD PDF预览

GWM100-0085X1-SMD

更新时间： 2024-11-19 18:42:59
品牌 Logo 应用领域
IXYS 开关光电二极管晶体管
页数 文件大小 规格书
3页 177K
描述
Power Field-Effect Transistor, 103A I(D), 85V, 0.0062ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD, 17 PIN

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GWM100-0085X1-SMD 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：SMD, 17 PIN
针数：17Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.72
外壳连接：ISOLATED配置：BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：85 V最大漏极电流 (Abs) (ID)：103 A
最大漏极电流 (ID)：103 A最大漏源导通电阻：0.0062 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G17
元件数量：6端子数量：17
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

GWM100-0085X1-SMD 数据手册

 浏览型号GWM100-0085X1-SMD的Datasheet PDF文件第2页浏览型号GWM100-0085X1-SMD的Datasheet PDF文件第3页 
                                                        
GWM100-0085X1  
VDSSꢀ  
ID25ꢀ  
RDSonꢀtyp.ꢀ=ꢀ 5.5ꢀmW  
=ꢀ 85ꢀV  
=ꢀ103ꢀA  
ThreeꢀphaseꢀfullꢀBridge  
with Trench MOSFETs  
in DCB isolated high current package  
L+  
G3  
G5  
S5  
G1  
S1  
S3  
L1  
L2  
L3  
Straight leads  
Surface Mount Device  
G4  
S4  
G6  
S6  
G2  
S2  
L-  
Applications  
MOSFETs  
Symbol  
VDSS  
AC drives  
• in automobiles  
Conditions  
MaximumꢀRatings  
TJ = 25°C to 150°C  
85  
20  
V
- electric power steering  
- starter generator  
• in industrial vehicles  
- propulsion drives  
- fork lift drives  
VGS  
V
ID25  
ID90  
ID110  
TC = 25°C  
TC = 90°C  
TC = 110°C  
103  
77  
68  
A
A
A
• in battery supplied equipment  
IF25  
IF90  
IF110  
TC = 25°C (diode)  
TC = 90°C (diode)  
TC = 110°C (diode)  
tbd  
tbd  
tbd  
A
A
A
Features  
• MOSFETs in trench technology:  
- low RDSon  
- optimized intrinsic reverse diode  
• package:  
Symbol  
Conditions  
CharacteristicꢀValues  
(TJ = 25°C, unless otherwise specified)  
- high level of integration  
- high current capability 300 A max.  
- aux. terminals for MOSFET control  
- terminals for soldering or welding  
connections  
- isolated DCB ceramic base plate  
with optimized heat transfer  
• Space and weight savings  
min. typ. max.  
1)  
RDSonꢀ  
on chip level at  
VGS = 10 V; ID = 75 A  
TJ = 25°C  
TJ = 125°C  
5.5  
6.2  
mW  
mW  
12.7  
VGS(th)  
IDSS  
VDS = 20 V; ID = 250 µA  
VDS = VDSS; VGS = 0 V  
2.0  
4.0  
5
V
TJ = 25°C  
TJ = 125°C  
µA  
µA  
100  
IGSS  
VGS  
=
20 V; VDS = 0 V  
0.2  
µA  
Packageꢀoptions  
Qg  
Qgs  
Qgd  
114  
30  
35  
nC  
nC  
nC  
• 2 lead forms available  
- straight leads (SL)  
- SMD lead version (SMD)  
VGS = 10 V; VDS = 42 V; ID = 75 A  
td(on)  
tr  
td(off)  
tf  
tbd  
tbd  
tbd  
tbd  
ns  
ns  
ns  
ns  
inductive load  
VGS = 10 V; VDS = 42 V  
ID = 75 A; RG = 39 Ω;  
TJ = 125°C  
Eon  
Eoff  
Erecoff  
tbd  
tbd  
tbd  
mJ  
mJ  
mJ  
RthJC  
RthJH  
1)  
1.0 K/W  
1.6 K/W  
with heat transfer paste (IXYS test setup)  
= ID·(RDS(on) + RPin to Chip)  
1.3  
V
DS  
IXYS reserves the right to change limits, test conditions and dimensions.  
© 2011 IXYS All rights reserved  
20110307  
1 - 3  
123

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