Datasheet > GWM100-0085X1

GWM100-0085X1

更新时间： 2024-11-19 12:20:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
3页	220K
描述
Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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中文翻译

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数据手册

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GWM100-0085X1 数据手册

GWM100-0085X1

V_DSSꢀ

I_D25ꢀ

R_DSonꢀtyp.ꢀ=ꢀ 5.5ꢀmW

=ꢀ 85ꢀV

=ꢀ103ꢀA

ThreeꢀphaseꢀfullꢀBridge

with Trench MOSFETs

in DCB isolated high current package

L+

Straight leads

Surface Mount Device

L-

Applications

MOSFETs

Symbol

V_DSS

AC drives

• in automobiles

Conditions

MaximumꢀRatings

T_J= 25°C to 150°C

- electric power steering

- starter generator

• in industrial vehicles

- propulsion drives

- fork lift drives

V_GS

I_D25

I_D90

I_D110

T_C= 25°C

T_C= 90°C

T_C= 110°C

103

• in battery supplied equipment

I_F25

I_F90

I_F110

T_C= 25°C (diode)

T_C= 90°C (diode)

T_C= 110°C (diode)

tbd

Features

• MOSFETs in trench technology:

- low RDSon

- optimized intrinsic reverse diode

• package:

Symbol

Conditions

CharacteristicꢀValues

(T_J= 25°C, unless otherwise speciﬁed)

- high level of integration

- high current capability 300 A max.

- aux. terminals for MOSFET control

- terminals for soldering or welding

connections

- isolated DCB ceramic base plate

with optimized heat transfer

• Space and weight savings

min. typ. max.

R_DSonꢀ

on chip level at

V_GS= 10 V; I_D= 75 A

T_J= 25°C

T_J= 125°C

5.5

6.2

12.7

V_GS(th)

I_DSS

V_DS= 20 V; I_D= 250 µA

V_DS= V_DSS; V_GS= 0 V

2.0

4.0

T_J= 25°C

T_J= 125°C

µA

100

I_GSS

V_GS

20 V; V_DS= 0 V

0.2

µA

Packageꢀoptions

Q_g

Q_gs

Q_gd

114

• 2 lead forms available

- straight leads (SL)

- SMD lead version (SMD)

V_GS= 10 V; V_DS= 42 V; I_D= 75 A

t_d(on)

t_r

t_d(off)

t_f

tbd

inductive load

V_GS= 10 V; V_DS= 42 V

I_D= 75 A; R_G= 39 Ω;

T_J= 125°C

E_on

E_off

E_recoff

tbd

R_thJC

R_thJH

1.0 K/W

1.6 K/W

with heat transfer paste (IXYS test setup)

= I_D·(R_DS(on)+ R_{Pin to Chip})

1.3

IXYS reserves the right to change limits, test conditions and dimensions.

20110307

1 - 3

12 3

中文翻译

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与GWM100-0085X1相关器件

型号	品牌	获取价格	描述	数据表
GWM100-0085X1-SMD	IXYS	获取价格	Power Field-Effect Transistor, 103A I(D), 85V, 0.0062ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1	IXYS	获取价格	Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM100-01X1-SL	IXYS	获取价格	Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1-SLSAM	IXYS	获取价格	MOSFET 6N-CH 100V 90A ISOPLUS
GWM100-01X1-SMD	IXYS	获取价格	Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1-SMDSAM	IXYS	获取价格	MOSFET 6N-CH 100V 90A ISOPLUS
GWM120-0075P3	IXYS	获取价格	Three phase full bridge with Trench MOSFETs in DCB isolated high current package
GWM120-0075P3-BL	IXYS	获取价格	Power Field-Effect Transistor, 118A I(D), 75V, 0.0055ohm, 6-Element, N-Channel, Silicon, M
GWM120-0075P3-SMD	IXYS	获取价格	Power Field-Effect Transistor, 118A I(D), 75V, 0.0055ohm, 6-Element, N-Channel, Silicon, M
GWM120-0075X1	IXYS	获取价格	Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

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