Datasheet > GWLA10

GWLA10

更新时间： 2024-11-24 01:25:43

品牌	Logo	应用领域
陶格斯 - TAOGLAS		全球定位系统
页数	文件大小	规格书
24页	1454K
描述
GPS/GALILEO & Dual-Band Wi-Fi Ceramic Loop Antenna

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GWLA10 数据手册

SPECIFICATION

Part No.

GWLA.10

Description

: GPS/GALILEO & Dual-Band Wi-Fi Ceramic

Loop Antenna

Embedded 2in1 Structure

Features

: Tiny Size

Omnidirectional

3.2*1.6*0.5mm

High Efficiency

Multi-Band Application

1575.42MHz GPS/GALILEO and 2.4/5.8GHz

Wi-Fi

Two Separate Feeds on one Antenna

Economical

Low profile

Surface-Mount

RoHS compliant

SPE-16-08-049/C/WY

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型号	品牌	获取价格	描述	数据表
GWM100-0085X1	IXYS	获取价格	Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM100-0085X1-SMD	IXYS	获取价格	Power Field-Effect Transistor, 103A I(D), 85V, 0.0062ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1	IXYS	获取价格	Three phase full Bridge with Trench MOSFETs in DCB isolated high current package
GWM100-01X1-SL	IXYS	获取价格	Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1-SLSAM	IXYS	获取价格	MOSFET 6N-CH 100V 90A ISOPLUS
GWM100-01X1-SMD	IXYS	获取价格	Power Field-Effect Transistor, 90A I(D), 100V, 0.0085ohm, 6-Element, N-Channel, Silicon, M
GWM100-01X1-SMDSAM	IXYS	获取价格	MOSFET 6N-CH 100V 90A ISOPLUS
GWM120-0075P3	IXYS	获取价格	Three phase full bridge with Trench MOSFETs in DCB isolated high current package
GWM120-0075P3-BL	IXYS	获取价格	Power Field-Effect Transistor, 118A I(D), 75V, 0.0055ohm, 6-Element, N-Channel, Silicon, M
GWM120-0075P3-SMD	IXYS	获取价格	Power Field-Effect Transistor, 118A I(D), 75V, 0.0055ohm, 6-Element, N-Channel, Silicon, M