Datasheet > GVT7164B19C-10

GVT7164B19C-10

更新时间： 2024-10-30 19:47:07

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		静态存储器内存集成电路
页数	文件大小	规格书
13页	130K
描述
Standard SRAM, 64KX18, 10ns, CMOS, PQCC52, LCC-52

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技术参数
数据手册

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GVT7164B19C-10 技术参数

生命周期：	Active	包装说明：	QCCJ,
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.A
HTS代码：	8542.32.00.41	风险等级：	5.8
最长访问时间：	10 ns	JESD-30 代码：	S-PQCC-J52
长度：	19.125 mm	内存密度：	1179648 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	18
功能数量：	1	端子数量：	52
字数：	65536 words	字数代码：	64000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	64KX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	QCCJ
封装形状：	SQUARE	封装形式：	CHIP CARRIER
并行/串行：	PARALLEL	座面最大高度：	4.57 mm
最大供电电压 (Vsup)：	5.25 V	最小供电电压 (Vsup)：	4.75 V
标称供电电压 (Vsup)：	5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	J BEND	端子节距：	1.27 mm
端子位置：	QUAD	宽度：	19.125 mm
Base Number Matches：	1

GVT7164B19C-10 数据手册

GVT7164B19

64K X 18 SYNCHRONOUS BURST SRAM

GALVANTECH, INC.

64K x 18 SRAM

SYNCHRONOUS

BURST SRAM

+5V SUPPLY WITH CLOCKED,

REGISTERED INPUTS, BURST COUNTER

FEATURES

GENERAL DESCRIPTION

•

Fast access times: 8, 9, 10, and 12ns

Fast clock speed: 83, 66, and 50 MHz

Provide high performance 2-1-1-1 access rate

Fast OE# access times: 5 and 6ns

Single +5V +5% power supply

3.3V I/O compatible

Clamp diodes to VSS at all inputs and outputs

Common data inputs and data outputs

Byte writeable via dual write enables

Address, data and control registers

Internally self-timed WRITE CYCLE

Automatic power-down for low power applications

High board density 52-lead PLCC packages

The Galvantech Synchronous Burst SRAM family

employs high-speed, low power CMOS designs using

advanced double-layer polysilicon, double-layer metal

technology. Each memory cell consists of four transistors and

two high valued resistors.

The GVT7164B19 SRAM integrates 65,536 x18 SRAM

cells with advanced synchronous peripheral circuitry and a 2-

bit counter for internal burst operation. All synchronous

inputs are gated by registers controlled by a positive-edge-

triggered clock input (CLK). The synchronous inputs include

all addresses, all data inputs, chip enable (CE#), burst control

inputs (ADSC#, ADSP#, and ADV#), and write enables

(WEL# and WEH#).

Asynchronous input includes the output enable (OE#).

The data outputs (DQ), enabled by OE#, are also

asynchronous.

Addresses and chip enables are registered with either

address status processor (ADSP#) or address status controller

(ADSC#) input pins. Subsequent burst addresses can be

internally generated as controlled by the burst advance pin

(ADV#).

OPTIONS

MARKING

•

Timing

8ns access/12ns cycle

9ns access/15ns cycle

10ns access/15ns cycle

12ns access/20ns cycle

-8

-9

-10

-12

•

Packages

Address, data inputs, and write controls are registered on-

chip to initiate self-timed WRITE cycle. WRITE cycles can

be one or two bytes wide as controlled by the write control

inputs. Individual byte enables allow individual bytes to be

written. WEL# controls DQ1-DQ8 and DQP1. WEH#

controls DQ9-DQ16 and DQP2.

52-pin PLCC

The GVT7164B19 operates from a +5V power supply.

All inputs and outputs are TTL-compatible. The device is

ideally suited for 486, Pentium , 680x0, and for systems that

are benefited from a wide synchronous data bus.

Pentium is a trademark of Intel Corporation.

Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051

Tel (408) 566-0688 Fax (408) 566-0699

Rev. 12/97

Galvantech, Inc. reserves the right to change

products or specifications without notice.

12 3 4 5 6 7...13

中文翻译

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与GVT7164B19C-10相关器件

型号	品牌	获取价格	描述	数据表
GVT7164B19C-12	CYPRESS	获取价格	Standard SRAM, 64KX18, 12ns, CMOS, PQCC52, LCC-52
GVT7164B19C-9	CYPRESS	获取价格	Standard SRAM, 64KX18, 9ns, CMOS, PQCC52, LCC-52
GVT7164B36T-10	CYPRESS	获取价格	Standard SRAM, 64KX36, 10ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164B36T-8	CYPRESS	获取价格	Standard SRAM, 64KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164B36T-9	CYPRESS	获取价格	Standard SRAM, 64KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT7164C18	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-5	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-6	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output
GVT7164C18Q-6T	CYPRESS	获取价格	Standard SRAM, 64KX18, 6ns, CMOS, PQFP100, PLASTIC, TQFP-100
GVT7164C18Q-7	CYPRESS	获取价格	64K x 18 Synchronous Burst RAM Pipelined Output

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