Datasheet > GU80N03

GU80N03

更新时间： 2024-11-28 03:40:03

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
5页	331K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GU80N03 数据手册

Pb Free Plating Product

ISSUED DATE :2005/06/24

GTM

CORPORATION

REVISED DATE :

BVDSS

DS(ON)

30V

8mΩ

80A

GU80N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GU80N03 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

The TO-263 package is universally preferred for all commercial-industrial surface mount applications and

suited for low voltage applications such as DC/DC converters.

Features

*Simple Drive Requirement

*Repetitive Avalanche Rated

*Low On-Resistance

Package Dimensions

Millimeter

REF.

Min.

Max.

4.80

1.00

0.30

0.5

Min.

Max.

1.45

1.47

9.0

4.40

0.76

0.00

0.36

1.25

1.17

8.6

2.54 REF.

1.50 REF.

ꢀ

14.6

0˚

1.27 REF.

15.8

8˚

2.29

9.80

2.79

10.4

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

f20

I_D@T

I_DM

P_D@T =25к

=25к

Continuous Drain Current , V_GS@10V

Pulsed Drain Current¹

=100к

315

Total Power Dissipation

83.3

Linear Derating Factor

0.67

W/ć

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Rthj-c

Value

1.5

Unit

ć/W

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Max.

Rthj-a

GU80N03

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