Datasheet > GTVA220701FA

GTVA220701FA

更新时间： 2024-03-03 10:07:09

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	814K
描述
High Power RF GaN-on-SiC HEMT 70 W, 50 V, 1805 - 2170 MHz

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GTVA220701FA 数据手册

GTVA220701FA

Thermally-Enhanced High Power RF GaN on SiC HEMT

70 W, 50 V, 1805 – 2170 MHz

Description

The GTVA220701FA is a 70-watt (P_3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

ampliﬁer applications. It features input matching, high eﬀiciency,

and a thermally-enhanced package with earless ﬂange.

Package Types: H-37265J-2

Single-carrier WCDMA Drive-up

V_DD= 48 V, I_DQ= 200 mA, ƒ = 1805 MHz

Features

•

GaN on SiC HEMT technology

Input matched

Typical CW performance, 1880 MHz, 48 V

- Output power at P_3dB= 45 W

- Eﬀiciency = 60.7%

- Gain = 21.6 dB

Human Body Model, Class 1A (per ANSI/ESDA/

JEDEC JS-001)

Capable of handling 10:1 VSWR @48 V, 40 W (CW)

output power

RoHS-compliant

3GPP WCDMA signal,

10 dB PAR, 3.84 MHz bandwidth

Efficiency

Gain

•

-20

-40

-60

-80

PAR @ 0.01% CCDF

g220701fa-gr1a

Average Output Power (dBm)

RF Characteristics

Single-carrier LTE Speciﬁcations (tested in the test ﬁxture)

V_DD= 48 V, I_DQ= 200 mA, P_OUT= 6.3 W avg, ƒ = 2170 MHz, 3GPP signal, 3.84 channel bandwidth, peak/average = 10.6 dB @ 0.01% CCDF

Characteristic

Symbol

G_ps

Min.

20.75

24.5

—

Typ.

Max.

—

Unit

Gain

Drain Efficiency

h_D

—

Adjacent Channel Power Ratio

Output PAR at 0.01% probablity on CCDF

ACPR

OPAR

–36.5

8.7

–33

—

dBc

8.0

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 05.1, 2022-1-27

For further information and support please visit:

https://www.macom.com/support

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