Datasheet > GTS9922E

GTS9922E

更新时间： 2024-09-15 03:40:03

品牌	Logo	应用领域
GTM		/
页数	文件大小	规格书
4页	274K
描述
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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数据手册

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GTS9922E 数据手册

Pb Free Plating Product

ISSUED DATE :2005/10/26

REVISED DATE :2007/01/25B

GTM

CORPORATION

BVDSS

DS(ON)

20V

15mꢀ

6.8A

GTS9922E

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design,

ultra low on-resistance and cost-effectiveness.

Features

*Low on-resistance

*Capable of 2.5V gate drive

*Optimal DC/DC battery application

*Surface mount package

Package Dimensions

Millimeter

REF.

Min.

Max.

1.20

0.15

0.30

0.20

3.10

Min.

Max.

6.60

4.50

6.20

4.30

0.05

0.19

0.09

2.90

0.65 BSC

0.45

0°

0.75

8°

Absolute Maximum Ratings

Parameter

Symbol

V_DS

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

±12

6.8

Continuous Drain Current³, V_GS@4.5V

Pulsed Drain Current¹

I_D@T

=25к

=70к

5.4

I_DM

Total Power Dissipation

P_D@T

A=25к

Linear Derating Factor

0.008

W/к

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Thermal Resistance Junction-ambient³Max.

Rthj-a

125

к/W

GTS9922E

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