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GTS6923 PDF预览

GTS6923

更新时间: 2024-11-20 03:40:03
品牌 Logo 应用领域
GTM 肖特基二极管
页数 文件大小 规格书
4页 333K
描述
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET

GTS6923 数据手册

 浏览型号GTS6923的Datasheet PDF文件第2页浏览型号GTS6923的Datasheet PDF文件第3页浏览型号GTS6923的Datasheet PDF文件第4页 
Pb Free Plating Product  
ISSUED DATE :2006/05/04  
REVISED DATE :  
GTM  
CORPORATION  
BVDSS  
DS(ON)  
-20V  
50m  
-3.5A  
GTS6923  
R
I
D
P-CHANNEL WITH SCHOTTKY DIODE POWER MOSFET  
Description  
The GTS6923 provides the designer with the best combination of fast switching, ultra low on-resistance and  
cost-effectiveness.  
Features  
*Low on-resistance  
*Fast Switch Characteristic  
*Included Schottky Diode  
Package Dimensions  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
1.20  
0.15  
0.30  
0.20  
3.10  
Min.  
Max.  
6.60  
4.50  
-
6.20  
4.30  
A
A1  
b
E
E1  
e
0.05  
0.19  
0.09  
2.90  
0.65 BSC  
0.45  
0°  
0.75  
8°  
c
L
D
S
Absolute Maximum Ratings  
Parameter  
Symbol  
VDS  
Ratings  
-20  
20  
Unit  
V
Drain-Source Voltage (MOSFET and Schottky)  
Reverse Voltage (Schottky)  
VKA  
V
Gate-Source Voltage (MOSFET)  
VGS  
±12  
-3.5  
-2.8  
-30  
1
V
Continuous Drain Current3 (MOSFET)  
Continuous Drain Current3 (MOSFET)  
Pulsed Drain Current1 (MOSFET)  
Average Forward Current (Schottky)  
Pulsed Forward Current1 (Schottky)  
Total Power Dissipation (MOSFET)  
Total Power Dissipation (Schottky)  
Storage Temperature Range  
ID @Ta=25к  
A
ID @Ta=70к  
A
IDM  
IF  
A
A
IFM  
25  
A
1
W
W
к
к
PD @Ta=25к  
1
Tstg  
Tj  
-55 ~ +150  
-55 ~ +125  
Operating Junction Temperature Range  
Thermal Data  
Parameter  
Symbol  
Value  
Unit  
Thermal Resistance Junction-ambient3 (MOSFET)  
Max.  
Max.  
Rthj-a  
125  
к/W  
Thermal Resistance Junction-ambient3 (Schottky)  
GTS6923  
Page: 1/4  

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