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GTS15PI120B2H PDF预览

GTS15PI120B2H

更新时间: 2024-11-21 17:15:51
品牌 Logo 应用领域
银茂微 - SILVERMICRO 双极性晶体管
页数 文件大小 规格书
11页 327K
描述
PIM IGBT-1200V

GTS15PI120B2H 数据手册

 浏览型号GTS15PI120B2H的Datasheet PDF文件第2页浏览型号GTS15PI120B2H的Datasheet PDF文件第3页浏览型号GTS15PI120B2H的Datasheet PDF文件第4页浏览型号GTS15PI120B2H的Datasheet PDF文件第5页浏览型号GTS15PI120B2H的Datasheet PDF文件第6页浏览型号GTS15PI120B2H的Datasheet PDF文件第7页 
GTS15PI120B2H  
Preliminary Data  
IGBT Module  
Features  
Short Circuit Rated >10μs  
Low Saturation VoltageVCE (sat) = 2.15V @ IC =15A , TC=25℃  
Low Switching Loss  
100% RBSOA Tested2×Ic)  
Low Stray Inductance  
Lead Free, Compliant with RoHS Requirement  
Applications:  
Industrial Inverters  
Servo Applications  
IGBT, Inverter  
Maximum Rated Values (TC=25unless otherwise specified)  
VCES  
VGES  
Collector-EmittBlocking Voltage  
Gate-Etter Voltag
1200  
±20  
15  
V
V
TC = 80,  
TC = 25℃  
TJ = 150℃  
A
IC  
Cous Collector Current  
30  
A
ICM  
tSC  
PD  
Repetitive Peak Collector Current  
Short Circuit Withstand Time  
30  
A
>10  
170  
μs  
W
TC = 25  
Maximum Power Dissipation per IGBT  
T
Jmax=150℃  
www.njsme.com  
2017 NJSME All rights reserved  
Page 1 Rev. 01  
01/05/2017  

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