Datasheet > GTRA262802FC

GTRA262802FC

更新时间： 2024-11-18 15:19:23

品牌	Logo	应用领域
MACOM		/
页数	文件大小	规格书
9页	530K
描述
High Power RF GaN-on-SiC HEMT 250 W; 48 V; 2490 - 2690 MHz

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GTRA262802FC 数据手册

GTRA262802FC

Thermally-Enhanced High Power RF GaN on SiC HEMT

250 W, 48 V, 2490 – 2690 MHz

Description

The GTRA262802FC is a 250-watt (P_3dB) GaN on SiC high electron

mobility transistor (HEMT) for use in multi-standard cellular power

ampliﬁer applications. It features input matching, high eﬀiciency,

and a thermally-enhanced package with earless ﬂange.

Package Types: H-37248C-4

PN: GTRA262802FC

Single-carrier WCDMA Drive-up

Features

V_DD= 48 V, I_DQ(MAIN)= 100 mA,

V_GS(PEAK)= –5.0 V, ƒ = 2635 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

•

GaN on SiC HEMT technology

Input matched

Typical pulsed CW performance, 2605 MHz, 48 V,

combined outputs, 16 µs pulse width, 10% duty

cycle

- Output power at P_3dB= 250 W

- Eﬀiciency = 62%

- Gain = 14.4 dB

Efficiency

Gain

•

Capable of handling 10:1 VSWR @48 V, 38 W (CW)

output power

Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

Low thermal resistance

Pb-free and RoHS compliant

-10

-30

-50

-70

PAR @ 0.01% CCDF

•

gtra262802fc_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in the Doherty production test ﬁxture)

V_DD= 48 V, I_DQ= 100 mA, V_GS(PEAK)= V_{GS @ DQ}= 200 mA – 2.05 V, P_OUT= 38 W avg, ƒ = 2635 MHz, 3GPP signal, 3.84 MHz channel

bandwidth, 10 dB peak/average @ 0.01% CCDF

Characteristic

Gain

Symbol

G_ps

Min.

13.5

Typ.

Max.

—

Unit

Drain Efficiency

Adjacent Channel Power Ratio

h_D

—

ACPR

—

–28

–24.5

dBc

Note:

All published data at T_CASE= 25°C unless otherwise indicated

ESD: Electrostatic discharge sensitive device—observe handling precautions!

MACOM Technology Solutions Inc. (MACOM) and its aﬃliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

Rev. 03.3, 2022-1-27

For further information and support please visit:

https://www.macom.com/support

12 3 4 5 6 7...9

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与GTRA262802FC相关器件

型号	品牌	获取价格	描述	数据表
GTRA262802FC-V2-R0	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA262802FC-V2-R2	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA263902FC-V2	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
GTRA362002FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA362002FC-V1	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
GTRA362802FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA362802FC-V1	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
GTRA364002FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA364002FC	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
GTRA374902FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H

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