Datasheet > GTR200HF65A5H

GTR200HF65A5H

更新时间： 2024-11-26 17:15:51

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
7页	423K
描述
IGBT Half Bridge-650V

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数据手册

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GTR200HF65A5H 数据手册

GTR200HF65A5H

Preliminary Data

IGBT Module

Features：

Short Circuit Rated >10μs

Low Saturation Voltage: V_{CE (sat)}= 1.60V @ I_C=200A , T_C=25℃

Low Switching Loss

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：

UPS and SMPS

Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

650

±20

200

310

400

>10

994

T_C= 80℃,

T_C= 25℃

T_J= 175℃

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C= 25℃

Maximum Power Dissipation per IGBT

_Jmax=175℃

www.njsme.com

Page 1 Rev.01

07/13/2016

12 3 4 5 6 7

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