Datasheet > GTR150TL65T2SH

GTR150TL65T2SH

更新时间： 2024-11-22 17:15:19

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
10页	681K
描述
IGBT Three Level-650V

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中文翻译

获取价格

数据手册

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GTR150TL65T2SH 数据手册

GTR150TL65T2SH

Preliminary Data

IGBT Module

Features：



Field Stop Trench Gate IGBT

Short Circuit Rated ＞10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：



UPS and SMPS

Industrial Inverters

Servo Applications

3 Level Inverter

IGBT, Inverter

Maximum Rated Values(T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

650

±20

150

235

300

>10

655

T_C= 100℃

T_C= 25℃

T_J= 175℃

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

μs

T_C= 25℃

T_Jmax=175℃

Maximum Power Dissipation (IGBT)

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03/25/2019

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