Datasheet > GTM150TL65B9H

GTM150TL65B9H

更新时间： 2024-11-26 17:15:31

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
11页	735K
描述
IGBT Three Level-650V

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中文翻译

获取价格

数据手册

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GTM150TL65B9H 数据手册

GTM150TL65B9H

IGBT Module

Features：

Field Stop Trench Gate IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Application：

3-Level-Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

650

±20

150

260

300

>10

806

T_C=100℃

T_C=25℃

T_J=175℃

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C=25℃

Maximum Power Dissipation per IGBT

_Jmax=175℃

www.njsme.com

Page 1 Rev. 03

09/23/2019

12 3 4 5 6 7...11

中文翻译

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