Datasheet > GTM100TL65B9H

GTM100TL65B9H

更新时间： 2024-11-22 17:15:27

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
11页	779K
描述
IGBT Three Level-650V

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中文翻译

获取价格

数据手册

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GTM100TL65B9H 数据手册

GTM100TL65B9H

IGBT Module

Features：

Field Stop Trench Gate IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested（2×Ic）

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Application：

3-Level-Applications

IGBT, Inverter

Maximum Rated Values (T_C=25℃unless otherwise specified)

V_CES

V_GES

Collector-Emitter Blocking Voltage

Gate-Emitter Voltage

650

±20

100

185

200

>10

585

T_C=100℃

T_C=25℃

T_J=175℃

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Repetitive Peak Collector Current

Short Circuit Withstand Time

μs

T_C=25℃

T_Jmax=175℃

Maximum Power Dissipation per IGBT

www.njsme.com

Page 1 Rev. 03

09/23/2019

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